Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

Bobby, A.; Shiwakoti, N.; Gupta, Partha Sarathi; Antony, Bobby

doi:10.1007/s12648-015-0764-y

Cited by 4 publications

(2 citation statements)

References 35 publications

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“…The main electronic parameters of SJS, which are calculated different methods via the developed software program, are given in Table I. The results obtained from the program are almost consistent with the papers [8,21,22,23]. Minor differences in results could be referred to as many situations such as using GaAs crystals, impurity, barrier inhomogeneity, image-force effect, series resistance, tunneling process and non-uniformity distribution of rectifier contact metal.…”

Section: Fig 2 Front Panel Of the Thermionic Emission (Te) Theorysupporting

confidence: 71%

LabVIEW Based a Software System: Quantitative Determination of Main Electronic Parameters for Schottky Junction Structures

Çіçek

Kurnaz

2019

Balkan Journal of Electrical and Computer Engineering

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LabVIEW is a software development platform that can be programmed with a graphical interface and so, measurement and instrumentation problems are used to deliver a solution. In the sensor applications, it is very important to calculate the main electronic parameters of the produced samples and it takes a lot of time to calculate these parameters and evaluate results. Therefore, LabVIEW based software system was developed to minimize the time spent. In this way, it was used to make the analysis as fast as possible. This study aimed to calculate quickly the obtained results from the measurement system. For this purpose, AuPd/n-GaAs Schottky Junction Structure (SJS) was produced by using RF and DC sputtering techniques to investigate on electronic parameters of SJS. The forward and reverse current-voltage (I-V) of SJS at ±3V were measured at room temperature (295 K). By using thermionic emission (TE) theory, Ohm's law, Cheung and Cheung's function and modified Norde's function, the electronics parameters such as the series resistance (Rs), the shunt resistance (Rsh), the barrier height (ΦB0) and the ideality factor (n) were calculated and graphics, which were drawn according to these models, via the developed software platform.

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Section: Fig 2 Front Panel Of the Thermionic Emission (Te) Theorysupporting

confidence: 71%

LabVIEW Based a Software System: Quantitative Determination of Main Electronic Parameters for Schottky Junction Structures

Çіçek

Kurnaz

2019

Balkan Journal of Electrical and Computer Engineering

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“…[2,[4][5][6][7][8][9][10]. Therefore, many researchers focused on modification of GaAs MS devices with the organic interlayer to reveal the properties and exact description of current transport mechanism in contacts [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Researchers were used a different type polymeric or non-polymeric organic compounds as an interface layer such as poly(2-methoxy-5-(2/-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) [2], Rhodamine 101 [5], poly (3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) (PEDOT) [6], perylene-monoimide (PMI) [7], Rhodamine-B (RhB) [8], 3,4,9,10-perylene tetra carboxylic dianhydride (PTCDA) [9], octadecylthiol (ODT) [10], N,N′-dimethyl-3,4,9,10-perylene tetra carboxylic diimide (DiMe-PTCDI) [13], dicarboxylic acid derivatives [14], phenol red [15], rubrene [16] and etc.…”

Section: Introductionmentioning

confidence: 99%

The current–voltage and capacitance–voltage characterization of the Au/Methylene Blue/n-GaAs organic-modified Schottky diodes

Akkaya¹

2018

Anadolu University Journal of Science and Technology-a Applied Sciences and Engineering

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We report the electrical properties of the Au/n-GaAs devices with and without thin organic interface layer. Methylene blue (MB) is a heterocyclic aromatic chemical compound with the molecular formula C16H18N3SCl. The MB layer was formed by spin coating technique on chemically cleaned gallium arsenide (GaAs) substrate. The current-voltage (I-V) characteristics of the Au/MB/n-GaAs metal-insulator-semiconductor (MIS) and Au/n-GaAs metal-semiconductor (MS) devices have been investigated at room temperature. The MS and MIS devices I-V characteristics showed a good rectification, and they were analyzed based on the thermionic emission (TE) theory. The ideality factor (n) and the barrier height (Φb (IV)) from the I-V characteristics was determined as 1.131±0.006 and 0.782±0.005 eV for MS device and 1.336±0.057 and 0.950±0.008 eV for MIS device, respectively. A Cheung's method and modified Norde's function has been used to extract the parameters including the (Φb) and the series resistance (RS). Distributions of the interface state density (Dit) of the MS and MIS devices were derived from I-V measurements. Our results indicate that the Au/MB/n-GaAs device had lower interface state density values than the Au/GaAs device. Also non-saturated reverse bias current was investigated by the using a Pole-Frenkel emission model. Furthermore, the optical and morphological properties of MB layer were investigated by the Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and UV-vis Spectrophotometer (UV-vis). Finally, we showed that, increasing Φb and decreasing Dit and improving electrical parameters of MIS devices indicates that, thin MB interface layer could be prefer for modification of Au/n-GaAs devices.

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Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures

2017

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Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

Cited by 4 publications

References 35 publications

LabVIEW Based a Software System: Quantitative Determination of Main Electronic Parameters for Schottky Junction Structures

LabVIEW Based a Software System: Quantitative Determination of Main Electronic Parameters for Schottky Junction Structures

The current–voltage and capacitance–voltage characterization of the Au/Methylene Blue/n-GaAs organic-modified Schottky diodes

Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures

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