The authors have used low energy electron-excited nanoscale-depth-resolved spectroscopy to probe the bulk and interface defect states of ultrathin Mo∕HfO2∕Si with conventional process sequences. Multiple deep level emissions are evident below the 5.9eV HfO2 near band edge, including three associated with HfO2 oxygen vacancies in different charge states predicted theoretically. Defects resembling SiO2-related nonbonding oxygen hole centers and positively charged O vacancies increase with depth within the 4nm HfO2 film suggesting Hf silicate formation at the HfO2∕Si interface. These states vary dramatically between process sequences and can be understood in terms of known reactions at HfO2–Si interfaces.

We show the incorporation of different amounts of SiO2 in conducting MoO2 results in materials that have large vacuum work functions tunable by approximately 1eV and improved thermal stability at elevated temperatures. Electrical measurements of MoSixOy∕HfO2∕SiOx∕n-Si capacitors show an approximate 5.1eV work function, suitable for p-channel metal-oxide-semiconductor devices. . Thickening of the interfacial SiOx layer was observed, however, after annealing the stack at higher temperatures in N2.

Field emission displays, due to their low driver electronics cost, are a competitive technology for large area flat screen displays. They are particularly well-suited for HDTV resolution displays which incorporate an enormous number of driver outputs. Here we demonstrate the suitability of nanotube-based field emission technology to obtain a high performance full-color display with 726 µm pixels, the proper size for a 42" 1280x720 HDTV resolution display. We report results of brightness, beam divergence, and uniformity measurements, and we show RGB color video images.

Phase Shift Masks (PSMs) for Extreme Ultraviolet Lithography (EUVL) have the potential for extending the lithographic capability of EUVL to at least the 22-nm node. Typical PSM structures, such as for attenuated PSMs (Att-PSMs), are similar to those of binary masks in the sense that patterned structures of one or more layers of phase shifter are deposited on the EUV multilayer mirror to provide the correct amount of attenuation and phase shift. However, another type of PSM implemented by etching into the Mo/Si multilayer, rather than by adding lithographic structures on top of the Mo/Si multilayer (additive approach), can also provide the required phase shift for both attenuated and hard PSMs. One of anticipated technical challenges, i.e. terminating etching at a specific depth with good surface uniformity can be solved by employing an etch stop layer (ESL) embedded at a target depth inside the multilayer. In designing PSMs using this subtractive fabrication technique, the position and thickness of the ESL should be optimized, so that optical function of the multilayer substrate with embedded ESL should be same or close to when it does not have any embedded layer. According to simulation, the print bias for PSMs by etching into the multilayer stack to create the phase shift is smallest and near ideal compared to other types of PSMs or binary masks fabricated by conventional methods. The increase of depth of focus by 25-75% for contacts using an attenuated PSM and by 50-100% for lines using an ideal hard PSM is another lithographic advantage as well. The design and method of fabricating PSMs by etching into the multilayers is described, which include the optimization of the thickness and depth of the embedded layer. Experimental results of the multilayer etch process demonstrate initial feasibility of the subtractive approach to fabricating EUV PSMs.Keywords: Extreme ultraviolet lithography, masks, phase shift masks, attenuated phase shift masks, hard phase shift masks 1. Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/20/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Proc. of SPIE Vol. 5037 323 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/20/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Proc. of SPIE Vol. 5037 327 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/20/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

Articles you may be interested inResolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process Development of an electron-beam lithography system for high accuracy masks J. Vac. Sci. Technol. B 21, 823 (2003); 10.1116/1.1547725Sub-50 nm stencil mask for low-energy electron-beam projection lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Low energy electron-beam proximity projection lithography: Discovery of a missing link Proximity effects and resist heating during high energy electron-beam ͑e-beam͒ patterning of extreme ultraviolet lithography ͑EUVL͒ mask were investigated for the 50 nm node and beyond. These effects were observed experimentally on both silicon wafers and standard 6025 photomasks coated with two different EUVL absorber stacks. Monte Carlo and resist simulations were used for proximity effect correction and resist heating effect verification. The estimated temperature change during electron-beam writing was also attempted using the finite element method.