increasing attention as an emerging class of new materials due to their unique aspects and new functionalities in optical, electrical, and chemical properties. [1] The design and fabrication of 2D semiconductor heterostructures stand as a major strategy for the development of various kinds of devices that range from electronics, [2] photovoltaics, [3] sensors, [4,5] spintronics, [6,7] and memories [8] with the intriguing possibility of enhanced performance. For example, TMD (MoS 2 /WS 2 ) heterostructures exhibit ultrafast charge transfer due to the close proximity of the two heterolayers and the collective motion of excitons at the interface, which enables novel 2D devices for optoelectronics and light harvesting. [9] In the TMD/graphene heterostructures, such hybrid systems exhibit obvious rectification and ambipolar properties with a high field-effect on-off ratio of >10 6 due to the strong interlayer coupling and large band offset between two layers, suggesting their great potentials for future novel optoelectronic devices. [10] Additionally, TMD/graphene heterostructures also demonstrate excellent chemical sensing capability and stability, which provide an essential sensing platform for wearable electronics. [5] To date, scale-up fabrication of transition metal dichalcogenide (TMD-) based 2D/2D or 2D/3D heterostructures with specific functionalities is still a great challenge. This study, for the first time, reports on the controllable synthesis of large-area and continuous 2D/3D semiconductor/metal heterostructures consisting of monolayer MoS 2 and bulk MoO 2 with unique electrical and optical properties via one-step, vapor-transport-assisted rapid thermal processing. The temperature-dependent electrical transport measurements reveal that the 2D/3D MoS 2 -MoO 2 heterostructure grown on SiO 2 /Si substrates exhibits metallic phase, while this heterostructure becomes a lowresistance semiconductor when it is grown on fused silica, which is attributed to the different degrees of sulfurization on different substrates, as being confirmed by surface potential analyses. Photoluminescence measurements taken on the MoS 2 -MoO 2 heterostructures reveal the simultaneous presence of both negative trions and neutral excitons, while only neutral excitons are observed in the monolayer MoS 2 . The trion-binding energy is determined to be ≈27 meV, and the trion signal persists up to 330 K, indicating significant stability at room temperature. This work not only provides a new platform for understanding the intriguing physics in TMD-based heterostructures but also enables the design of more complicated devices with potential applications in nanoelectronics and nanophotonics.To date, 2D semiconducting transition metal dichalcogenides (TMDs) and TMD-based heterostructures have gained