In this work, characteristics of silicon-based p + type, intrinsic (I), n − type (Si-PIN) photodiodes with active area of 3.5 × 3.5 mm 2 , 5.0 × 5.0 mm 2 , or 7.0 × 7.0 mm 2 and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NÜRDAM) of Bolu Abant İzzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. Quantum efficiency and spectral responsivity measurements were performed in the photovoltaic mode. Both measurements were carried out in a dark environment at room temperature. The measured values of the dark current (I dc) and the capacitance of photodiodes were-6.97 to-19.10 nA and 23 to 61 pF at-5 V, respectively. The quantum efficiency measurements of the devices increased up to 66%. P responsivity was found to be 0.436 ± 1 mA/W at 820 nm. The results indicate that the I dc current and the performance of the devices were improved. Therefore, the devices can be utilized for optoelectronics applications and commercial usage.
The Silicon PIN photodiode (NÜR-PIN) with active area (3.5. x 3.5. mm 2 ) was designed and fabricated on (100) N-type floating zone silicon substrates by using conventional photolithography process at Nuclear Radiation Detectors Applications and Research Center (NÜRDAM). To get NÜR-PIN and BPW34 specifications, capacitancevoltage (C-V) and current -voltage (I-V) measurements were accomplished at room temperature by using Keithley 4200-SCS and results were compared. The leakage current and capacitance at -10V are 20 nA and 17.7 pF for NÜR-PIN, 32 nA and 27 pF for BPW34. Even if NÜR-PIN has good results at low reverse voltage, it is unstable at high reverse voltage compared to BPW34 photodiodes.
The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabricated by using a conventional photolithography process at the Center of Nuclear Radiation Detectors Research and Application (NÜRDAM) for the investigation of electrical characteristics and alpha particle detection performance. To obtain the device electrical specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. The Si-PIN photodiode was then used to detect alpha particles from different radioactive sources in a vacuum at room temperature. Photodiode dark current and capacitance were measured and found to be -20 nA and 23pF, respectively, at -20 Volts (the operating voltage used during alpha particle detection). The possibilities of improving the parameters of the photodiode are discussed.
The purpose of this study is to give detailed information about fabrication and characterization of resistance temperature detector by smart mask design. The effects of annealing on both structural and electrical properties were investigated. Changes in micro strain, lattice parameter and grain size values were observed by means of annealing. It has been shown that the structural changes cause a decrease in resistivity and sheet resistance values. Thousands of sensors can be fabricated according to the substrate size of thin film RTD produced. It is almost impossible to fabricated thousands of sensors with the same resistance value. But by the agency of the smart mask design proposed in this study, it is possible to adjust each RTD to the same resistance value by using the resistance adjustment points. Maximum TCR value was found to be around 3.84x103 ppm/0C. This value is very close to the standard TCR value 3.85x103 ppm/0C used for industrial applications.
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