In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
This paper presented a new detector module consisting of a micropixel avalanche photodiode (MAPD-3NM), LaBr 3 :Ce scintillator, and a compact read-out interface system for detecting gamma-rays in a wide energy range. The MAPD array (4 × 4 channels) was assembled using a single MAPD-3NM characterized by its high photon detection efficiency (∼25%), pixel density (10 000 pixels/mm 2 ), low operation voltage (74.5 V), and low dark current. An active area of a single MAPD-3NM was 3.7 × 3.7 mm 2 , while this value was 17 × 17 mm 2 for the assembled array with pixel density of 2190 000. The size of the tested LaBr 3 :Ce scintillator was 15 × 15 × 15 mm 3 . According to the characteristics of the detector module, a compact read-out interface device (SPECTRIG MAPD) was developed. SPECTRIG MAPD was designed as a miniature device with low power consumption, which continues to provide a wide spectrum of functions needed for measurement and test silicon photomultipliers (SiPM) and scintillation detectors on their basis. The various experiments were implemented to test the detection performance of a detector module to gamma radiation in the range from 30 keV to 4400 keV.
In this work, characteristics of silicon-based p + type, intrinsic (I), n − type (Si-PIN) photodiodes with active area of 3.5 × 3.5 mm 2 , 5.0 × 5.0 mm 2 , or 7.0 × 7.0 mm 2 and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NÜRDAM) of Bolu Abant İzzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. Quantum efficiency and spectral responsivity measurements were performed in the photovoltaic mode. Both measurements were carried out in a dark environment at room temperature. The measured values of the dark current (I dc) and the capacitance of photodiodes were-6.97 to-19.10 nA and 23 to 61 pF at-5 V, respectively. The quantum efficiency measurements of the devices increased up to 66%. P responsivity was found to be 0.436 ± 1 mA/W at 820 nm. The results indicate that the I dc current and the performance of the devices were improved. Therefore, the devices can be utilized for optoelectronics applications and commercial usage.
The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years.
The Silicon PIN photodiode (NÜR-PIN) with active area (3.5. x 3.5. mm 2 ) was designed and fabricated on (100) N-type floating zone silicon substrates by using conventional photolithography process at Nuclear Radiation Detectors Applications and Research Center (NÜRDAM). To get NÜR-PIN and BPW34 specifications, capacitancevoltage (C-V) and current -voltage (I-V) measurements were accomplished at room temperature by using Keithley 4200-SCS and results were compared. The leakage current and capacitance at -10V are 20 nA and 17.7 pF for NÜR-PIN, 32 nA and 27 pF for BPW34. Even if NÜR-PIN has good results at low reverse voltage, it is unstable at high reverse voltage compared to BPW34 photodiodes.
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