Comparison of Nür-Pin Photodiode and Bpw34 Pin Photodiode

Abstract

The Silicon PIN photodiode (NÜR-PIN) with active area (3.5. x 3.5. mm 2 ) was designed and fabricated on (100) N-type floating zone silicon substrates by using conventional photolithography process at Nuclear Radiation Detectors Applications and Research Center (NÜRDAM). To get NÜR-PIN and BPW34 specifications, capacitancevoltage (C-V) and current -voltage (I-V) measurements were accomplished at room temperature by using Keithley 4200-SCS and results were compared. The leakage current and capacitance at -10V are 20 nA and 17.7 pF for NÜR-PIN, 32 nA and 27 pF for BPW34. Even if NÜR-PIN has good results at low reverse voltage, it is unstable at high reverse voltage compared to BPW34 photodiodes.