In this paper, we demonstrate the high electrical activity of extended defects found in 3C–SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning transmission electron microscopy analysis was performed to reveal the defects while scanning spreading resistance microscopy aimed to study their electrical behavior. Using this technique, complete layer resistance cartography was done. The electrical activity of the extended defects in 3C–SiC was clearly evidenced. Furthermore, the defect activity was estimated to be higher than that of heavily nitrogen doped (5×1018 cm−3) 3C–SiC layer.

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In this work, Schottky barrier diodes (SBD), made using lift‐off process, were realized on low doped n‐type GaN grown by MOCVD. Schottky to Schottky structures were first realized, allowing to select convenient process parameters that reduce the leakage current, such as surface cleaning, thickness of the metallic contact and annealing time or temperature. Then, planar Schottky diodes were patterned and characterized to extract barrier height and ideality factor. Results show that good rectifying behaviour can be obtained with a 300nm thick Ni Schottky contact annealed in RTA at 450°C during 3 min under Argon. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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