Evidence of electrical activity of extended defects in 3C–SiC grown on Si

Song, Xiaoshi; Michaud, Jean-François; Cayrel, Frédéric; Zieliński, Marcin; Portail, Marc; Chassagne, Thierry; Collard, Emmanuel; Alquier, Daniel

doi:10.1063/1.3383233

Cited by 68 publications

(53 citation statements)

References 18 publications

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“…This assumption is confirmed by Song et al's experimental observation. In their work, they were able to show that the electric activity of such defects is even higher than that of the heavily nitrogen doped (5 × 10 18 cm −3 ) 3C-SiC44. Therefore, even though they are not intentionally doped, our NSs, owning to their high density of defect, are highly conductive (see the corresponding electrochemical results in Supplementary Fig.…”

Section: Discussionmentioning

confidence: 89%

When epitaxy meets plasma: a path to ordered nanosheets arrays

Zhuang

Zhang

Fuchs

et al. 2013

Sci Rep

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The possibility of a controlled assembly of 2-dimensional (2D) nanosheets (NSs) into ordered arrays or even more sophisticated structures offers tremendous opportunities in the context of fabrication of a variety of NSs based devices. Reports of such ordered NSs are rare and all conventional “top-down” methods typically led to coarse structures exhibiting only limited surface quality. In this work, we demonstrate a path to directly synthesis ordered NSs arrays in a plasma activated chemical vapor deposition technique utilizing planar defects formed during hetero-epitaxial growth of crystals featuring a close-packed lattice. As an example, the synthesis of 3C-SiC NSs arrays with well-defined orientation on (001) and (111) Si substrates is shown. A detailed analysis identifies planar defects and the plasma environment as key factors determining the resulting 2D NSs arrays. Consequently, a “planar defects induced selective growth” effect is proposed to elucidate the corresponding growth mechanism.

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Section: Discussionmentioning

confidence: 89%

When epitaxy meets plasma: a path to ordered nanosheets arrays

Zhuang

Zhang

Fuchs

et al. 2013

Sci Rep

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“…The latter explanation is widely accepted while for the former there is a reticence whether the extended defects can dominate the carrier transport. However, in a recent study [71], scanning spreading resistance microscopy (SSRM) technique was used to investigate the electrical activity of the extended defects (antiphase boundaries, twin bands and stacking faults) of 3C-SiC films grown on Si substrates. The measurements revealed a lower resistance of the region containing the defects than of the surrounding area even in the case of layers with high (510 18 cm -3 ) intentional doping concentration.…”

Section: Sic Nanowire Field Effect Transistors (Sic-nwfets)mentioning

confidence: 99%

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

181

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Abstract. SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in the different sections of the present paper.

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“…Besides the possibility to fabricate SI material, TMs, especially manganese (Mn) and iron (Fe), may also be used to obtain diluted magnetic semiconductors. [4][5][6][7] Using electron spin resonance, Baranov et al 8 tried to identify the electronic states of Fe in 6H-SiC, which may be responsible for its SI property. Only very few electrical investigations on Fe-related levels in SiC have been presented.…”

Section: Introductionmentioning

confidence: 99%

Deep levels in iron doped n- and p-type 4H-SiC

Beyer¹,

Hemmingsson²,

Leone³

et al. 2011

Journal of Applied Physics

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Deep levels were detected in Fe-doped n-and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (E C -0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (E V þ 0.97 eV and E V þ 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n-and p-type 4H-SiC epitaxial layers. The majority of the capture process for Fe1, Fe2, and Fe3 is multi-phonon emission assisted. These three detected peaks are suggested to be related to Fe.

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Evidence of electrical activity of extended defects in 3C–SiC grown on Si

Cited by 68 publications

References 18 publications

When epitaxy meets plasma: a path to ordered nanosheets arrays

When epitaxy meets plasma: a path to ordered nanosheets arrays

SiC nanowires: material and devices

Deep levels in iron doped n- and p-type 4H-SiC

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