Recent Progresses in GaN Power Rectifier

Alquier, Daniel; Cayrel, Frédéric; Ménard, Olivier; Bazin, Anne-Elisabeth; Yvon, Arnaud; Collard, Emmanuel

doi:10.7567/jjap.51.01ag08

Cited by 12 publications

(11 citation statements)

References 46 publications

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“…5-a that for low GRDC, the breakdown voltage is V br =755 V and corresponds to the value for a "mesa only" edge termination. This value agrees with the breakdown voltage measured on similar rectifier architecture with resistive guard ring by Alquier et al [6]. Then by increasing the GRDC to N a =6×10 17 cm -3 , the breakdown voltage reaches V br =1590 V and keeps constant up to N a =4×10 18 cm -3 .…”

Section: Resultssupporting

confidence: 90%

“…All simulations have been performed with a Schottky barrier height and a specific ohmic contact resistance of Φ b =1 eV [6] and ρ c = 10 -5 Ω.cm 2 [7,8], respectively. These parameters have been both collected from the literature and compared to values extracted on existing devices from our current project.…”

Section: Device Simulation Descriptionmentioning

confidence: 99%

“…The use of pseudo-vertical design allows a significant reduction of the GaN Schottky diode on-resistance due to the vertical current conduction in the drift region under forward bias. Then, a vertical extension of the electric field in the drift region under reverse bias is expected with a good efficiency of the "mesa + guard ring" edge-termination [6]. This work presents the optimization of a pseudo-vertical GaN Schottky rectifier specifications by finite element simulations.…”

Section: Introductionmentioning

confidence: 99%

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Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Souguir-Aouani

Thierry-Jebali

Tournier

et al. 2016

MSF

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This work presents the impact analysis of physical and geometrical parameters on the on-resistance and the breakdown voltage in order to optimize a 600 V pseudo-vertical GaN/Si Schottky rectifier. The results by finite element simulations indicate that the most influent parameter on the resistance is the thickness of the n+ layer. Regarding reverse specifications, simulations show that a good efficiency of the “Mesa + Guard Ring” is achieved for a guard ring doping concentration higher than Na=5×1017 cm-3.

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Section: Resultssupporting

confidence: 90%

Section: Device Simulation Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Souguir-Aouani

Thierry-Jebali

Tournier

et al. 2016

MSF

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“…One can directly observe a large degradation on the annealed diodes compared to the as‐grown one. A barrier height of 1.03 eV and an ideality factor of 1.06 were extracted from the J – V curves measured on as‐grown GaN diodes, as we generally observe in our case . However, forward electrical behavior of the diodes on annealed GaN evidenced the presence of a double barrier.…”

Section: Resultssupporting

confidence: 63%

Impact of rapid thermal annealing on Mg-implanted GaN with a SiO_x /AlN cap-layer

Khalfaoui

Oheix

El-Zammar

et al. 2016

Phys. Status Solidi A

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Phone: þ33 2 47 42 40 00 ext: 4647, Fax: þ33 2 47 42 49 37Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a "box-like" profile. SIMS measurements showed unexpected deep Mg profile due to defect-assisted channeling in the GaN. In addition, a high-density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap-layer was deposited by reactive sputtering followed by SiO x deposition leading to a double cap-layer. Afterwards, the capped samples were RTA-annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap-layer was etched using chemical solutions. AFM characterizations, after annealing and caplayer etching, demonstrated that a GaN surface with similar roughness to as-grown samples and pit-free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF-SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples.

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“…[21] Among the aforementioned devices structures, Schottky diodes can lead to significant benefits when replacing siliconbased fast rectifiers in switching applications, such as power factor correction (PFC). [22] The main building block of such devices is the metal/ semiconductor contact, whose properties and uniformity strongly depend on the material quality and surface preparation and, ultimately, affect the device performances.…”

Section: Introductionmentioning

confidence: 99%

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

Greco

Giannazzo

Fiorenza

et al. 2017

Physica Status Solidi (a)

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Gallium nitride (GaN) is a promising candidate for high‐power and high‐frequency devices. To date, the lack of large area bulk GaN materials of reasonable cost and quality has limited the technology almost completely to lateral devices. However, vertical structures are attractive to obtain a higher current density and a reduced device size. In this work, the electrical behavior of a Ni/Au Schottky barrier on bulk GaN material is studied, using vertical Schottky diodes. The forward current–voltage characteristics of the diodes reveal a temperature dependence of both the ideality factor (n) and of the Schottky barrier height (ΦB). The ideal value of the barrier of 1.72 eV extrapolated at n = 1 is in agreement with the results obtained by capacitance–voltage measurements. A nanoscale electrical analysis performed by conductive atomic force microscopy (C‐AFM) allow to visualize the barrier height inhomogeneity and to correlate the current distribution to the surface morphology of the material. The barrier inhomogeneity explains the temperature behavior of ideality factor and barrier height determined by the macroscopic diodes. Preliminary structural analyses carried out by transmission electron microscopy (TEM) of the metal semiconductor interface revealed a typically flat Au/Ni bilayer structure, the Ni layer being epitaxial to GaN, with some mosaicity.

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Recent Progresses in GaN Power Rectifier

Cited by 12 publications

References 46 publications

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Impact of rapid thermal annealing on Mg-implanted GaN with a SiO_x /AlN cap-layer

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

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Recent Progresses in GaN Power Rectifier

Cited by 12 publications

References 46 publications

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

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Product

Resources

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Impact of rapid thermal annealing on Mg-implanted GaN with a SiO_x /AlN cap-layer