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Abstract-This paper evaluates the effect switch design and control method have on the rise and fall time of a photoconductive microwave switch at 2GHz. The effects of switch dimensions, switch fabrication methods and light intensity of the control mechanism are investigated. Switch rise time is affected by switch dimension and optical illumination intensity. Switch fall time is dependent on passivation of the silicon -which is a fabrication step often used to improve the conductivity within photoconductive devices.

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A methodology for electronic non-destructive failure analysis of 3D-ICs is presented. The method is centred on the Electro Optical Terahertz Pulse Reflectometry technique. Through use of 3D Electromagnetic modelling, a Virtual Known Good Device can be established allowing the means to locate faults in a 3D package design. Measured voltage waveforms generated using the Electro Optical Terahertz Pulse Reflectometry technique are presented for a BGA package with an open defect. Measurements are in good agreement with 3D EM simulation results for the same scenario demonstrating the potential of this technique to locate faults quickly and accurately.

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