A novel, high power optically controlled microwave switch is presented. The switch uses integrated illumination of a silicon superstate through a low loss glass substrate which reduces losses related to the plasma conductivity tail in the silicon. Numerical electromagnetic modelling is used to design the switch and good agreement between measured and simulated results has been achieved. The switch is then characterised using a two-tone non-linearity test at 2GHz and a third order intercept point of +72dBm is obtained with 10W per tone.