Design and operation influences regarding rise and fall time of a photoconductive microwave switch

Kowalczuk, Emma K.; Panagamuwa, Chinthana; Seager, Rob

doi:10.1109/lapc.2013.6711871

Cited by 8 publications

(9 citation statements)

References 7 publications

(8 reference statements)

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“…This initial value is just an indication of the actual carrier lifetime within the switch as when the silicon is diced, the damage caused at the edges will reduce the carrier lifetime. Measured rise and fall times of the switch are reported in previous work by Kowalczuk et al [17]. The silicon has been designed to have a high carrier lifetime to improve conductivity and has the added benefit of producing reduced distortion.…”

Section: Discussionmentioning

confidence: 92%

Intermodulation distortion in a photoconductive microwave switch

Kowalczuk

Panagamuwa

Seager

2016

2016 Loughborough Antennas &Amp; Propagation Conference (LAPC)

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Section: Discussionmentioning

confidence: 92%

Intermodulation distortion in a photoconductive microwave switch

Kowalczuk

Panagamuwa

Seager

2016

2016 Loughborough Antennas &Amp; Propagation Conference (LAPC)

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“… (a) The light spot covering the silicon dice, (b) the flare angle θ of the light impinging on the silicon dice at a distance of d , (c) luminous intensity distribution curve of LED . [Color figure can be viewed in the online issue, which is available at http://wileyonlinelibrary.com]…”

Section: Resultsmentioning

confidence: 99%

“…As a kind of incoherent and wide-spectrum light source, the spectral power distribution of a typical single-color LED follows the Gaussian distribution with spectral width of 30-40 nm at its center wavelength [16]. With these curves, the photon density of light emitted from the LED can be computed as follows…”

Section: Spectral Power Distribution Of Ledsmentioning

confidence: 99%

“…As a kind of incoherent and wide‐spectrum light source, the spectral power distribution of a typical single‐color LED follows the Gaussian distribution with spectral width of 30–40 nm at its center wavelength . With these curves, the photon density of light emitted from the LED can be computed as follows

I = \frac{P_{0} λ (|, 1 - R)}{A h c}

where

I

is the photon density irradiating into the material in the unit of

{(|, {normalm}^{2} normals)}^{- 1}

, denoting the number of photons passing through unit area in unit time;

P_{0}

is the power of light,

λ

is the wavelength of light,

R

is the reflection coefficient,

A

is the area of light spot,

h

is the Planck constant, and

c

is the speed of light.…”

Section: Principle Of Ocmsmentioning

confidence: 99%

See 1 more Smart Citation

Experimental study of silicon‐based microwave switches optically driven by LEDs

Zhao

Han

Zhang

et al. 2015

Micro & Optical Tech Letters

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Simulated resonances were 1.104, 2.144, and 2.328 GHz, while the measured ones were 1.1, 2.1, and 2.3 GHz.In respect of radiation patterns at resonance frequencies, the simulated antenna presented maximum gains of 0.8545 dB, 2.6899 dB, and 2.3305 dB, respectively.A proof of concept using a powerharvester working at 915 MHz was conducted to get experimental radiation patterns, which at this frequency showed maximum voltage values 992 mV at 2208 on the E-plane and 1418 mV at h 5 08 on the Hplane, respectively. At 915 MHz, the simulated antenna showed a gain of 0.0784 dB at 1808 for both E-plane and H-plane and maximum radiated electric field multiplied by the radial distance of 556 mV also observed at 1808 for both E-plane and H-plane.The LPTT antenna is broadband, this ensures an impedance bandwidth of 2 GHz from 400 MHz to 2.4 GHz reference to 25 dB. The antenna performance is considerably good at its three resonance frequencies, where relatively low return losses and acceptable gains are observed. A disadvantage of this type of antenna is that if bandwidths beginning at several hundred MHz are required, this would result in a relatively large antenna. The LPTT antenna does not have high gains and low return loss as typical patches have but its main advantage is that is broadband. This antenna is applicable in low power consumption devices, battery backup or hybrid system based on both battery power and RF energy harvesting.ABSTRACT: The feasibility of utilizing small-size low-cost commercial light-emitting diodes (LEDs) to drive the optically controlled microwave switches (OCMS) is experimentally investigated. A series of experiments are performed within 0.5-5 GHz bandwidth by utilizing six kinds of LEDs and a 980 nm-laser to drive the OCMS. The results show that white, red, and violet LEDs are three competitive candidates to replace high-cost lasers as the controller of OCMS if their power density impinging on the silicon dice of the OCMS could be increased up to 100 mW=mm 2 . Additionally, the reason leading to high insertion loss of the OCMS driven by the LEDs is revealed.ABSTRACT: An InGaAs/InP three mesa double heterojunction bipolar transistor demonstrating f t /f max of 350/532 GHz was fabricated on 3 inch wafer with a 0.5 lm emitter and a composite collector. Base resistance R bb of around 19 X was achieved to sustain a relative high f max in 0.5 lm linewidth device. Small signal equivalent circuit model was established, and good agreement between measured and simulated values was achieved. Effects of some key parameters were analyzed based on simulated small signal equivalent circuit model.

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“…Optically controlled attenuation or switching of microwave and millimetre-wave signals has attracted increasing attention partly due to the high linearity and high isolation between signal and control circuitry [1]. Microwave switches based on illumination of silicon die bridging a microstrip or coplanar waveguide (CPW) inner conductor gap have been extensively investigated in [2][3][4][5][6]. These achieved more than 10 dB switching with either fibrecoupled lasers or infrared light-emitting diodes (LEDs) below 6 GHz, whereas the off-state isolations quickly deteriorate at higher frequencies due to increased coupling through the gap.…”

Section: Introductionmentioning

confidence: 99%

Optically controlled millimetre‐wave switch with stepped‐impedance lines

Zhang¹,

Pang²,

Cryan³

2019

IET Microwaves, Antennas & Propagation

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A photoconductive grounded coplanar waveguide (GCPW) millimeter-wave switch controlled by a single infrared light emitting diode (LED) is presented. By converting a straight GCPW transmission line into an alternating steppedimpedance line structure, the proposed device shows an on-state insertion loss of less than 2.9 dB and an off-state isolation of more than 15 dB over a wide frequency range of 12-30 GHz, with a particularly good RF performance in the K band (18-27 GHz). The required optical power and electrical power of the switch are only 199 mW and 364 mW, repectively. This device also demonstrates an absorptive characteristic with a low reflection coefficient of less than-13.5 dB within this frequency range for both the on and off states. In addition, by employing through-holes for illumination of a silicon superstrate, the proposed device can be fabricated with rapid and low-cost laser-etching and can be easily integrated with other microwave and millimeter-wave circuits.

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Design and operation influences regarding rise and fall time of a photoconductive microwave switch

Cited by 8 publications

References 7 publications

Intermodulation distortion in a photoconductive microwave switch

Intermodulation distortion in a photoconductive microwave switch

Experimental study of silicon‐based microwave switches optically driven by LEDs

Optically controlled millimetre‐wave switch with stepped‐impedance lines

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