We have performed three-dimensional characterization of the TPA effective laser spot size in silicon using an integrated knife-edge sensor. The TPA-induced response of a CMOS integrated circuit is analyzed based on these results and compared to simulation; we have found that the charge injection capacity in IC's active layer could be influenced by irradiance energy and focus depth.
This paper reviews important parameters for the two-photon absorption (TPA) laser stimulation technique and presents results concerning the characterization of the TPA effective spot size along lateral and axial directions. TPA scans are compared with classical photoelectric stimulation images to investigate TPA capabilities for failure analysis and design debug.
This paper presents the use of pulsed laser stimulation with picosecond and femtosecond laser pulses. We first discuss the resolution improvement that can be expected when using ultrashort laser pulses. Two case studies are then presented to illustrate the possibilities of the pulsed laser photoelectric stimulation in picosecond single-photon and femtosecond two-photon modes.
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