3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing

Abstract

We have performed three-dimensional characterization of the TPA effective laser spot size in silicon using an integrated knife-edge sensor. The TPA-induced response of a CMOS integrated circuit is analyzed based on these results and compared to simulation; we have found that the charge injection capacity in IC's active layer could be influenced by irradiance energy and focus depth.

Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs

“…Indeed, 3PA generation is expected to be significant only near the focal point of the beam and to decrease rapidly away from this region due to the beam size increase. This phenomenon, which is well-known for 2PA [28], should be even faster for 3PA since the generation rate is then proportional to w(z) -6 , where w(z) is the beam width profile along the optical axis. V DS = 120 V V GS = 0 V y = 0.12x R² = 0.99 laser generated electron-hole pairs.…”

Time-domain study on reproducibility of laser-based soft-error simulation

“…There are several papers for predicting the structure theoreticallysome of them are taking into account even the nonlinear propagation effects [29][30][31] but they face an issue from the viewpoint of quantitative aspects. 31) Also, an experimental technique is reported, 32) but it relies on an assumption where nonlinear propagation effects are ignored. 15) Here, we present our technique developed to extract such carrier information from the measured I-t waveforms.…”

Probing surface recombination velocities in semiconductors using two-photon microscopy

“…(2) with the appropriate boundary conditions, the electron density is obtained with the convolution $$nfalse(\mathrm{boldr},tfalse)=true\int \mathrm{normald}\mathrm{boldr}\prime Gfalse(\mathrm{boldr},\mathrm{boldr}\prime ,tfalse)gfalse(\mathrm{boldr}\prime false),$$ and integrating the above density over a collection volume V yields the PL intensity $$Ifalse(tfalse)=\frac{1}{{\tau }_r}{\int }_V\mathrm{normald}\mathrm{boldr}nfalse(\mathrm{boldr},tfalse),$$ where τ r = 1/ Bp 0 is the radiative lifetime ( B : radiative recombination coefficient of the material, p 0 : hole doping). The lateral collection area is set by the spot size, while the generation volume is contained within the spot size and is generally smaller (the generation volume is determined in part by the laser fluence 10 ). The volumes in Eqs.…”