Nonlinear Optics 2011
DOI: 10.1364/nlo.2011.nmd5
|View full text |Cite
|
Sign up to set email alerts
|

3D Knife-edge Characterization of Two-Photon Absorption Volume in Silicon for Integrated Circuit Testing

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2011
2011
2016
2016

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 4 publications
0
3
0
Order By: Relevance
“…A recent study about TPA induced SET on a silicon photodiode has given an effective length of the TPA probe of 17 and 24 m for pulse energies of 1 and 3 nJ [15]. The laser parameters used were similar to the ones used in this study.…”
Section: ) Tpa Probe Effective Lengthmentioning
confidence: 99%
“…A recent study about TPA induced SET on a silicon photodiode has given an effective length of the TPA probe of 17 and 24 m for pulse energies of 1 and 3 nJ [15]. The laser parameters used were similar to the ones used in this study.…”
Section: ) Tpa Probe Effective Lengthmentioning
confidence: 99%
“…As the experimental applications of 2PA SEE have continued to evolve, there has been an increasing need for a quantitative understanding of the carrier generation process. However, there are significant complexities associated with accurately modeling this physical process, including the extraordinary non-paraxial focusing conditions encountered during beam propagation, a multiplicity of NLO phenomena that participate in the generation of carriers, and complicated changes in beam shape that can occur during propagation [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…In the area of Nonlinear Absorption and Dispersion, two-photon absorption is characterized by Cirloganu et al [26] for direct bandgap materials and by Pouget et al [27] in silicon. Wahlstrand et al [28] describe theoretically and experimentally how a static field can be used to control the generated photocarriers in GaAs.…”
mentioning
confidence: 99%