Numerical approaches for predicting two-photon absorption induced single-event effects in semiconductors

Abstract

Two numerical approaches for determining the charge generated in semiconductors via two-photon absorption (2PA) under conditions relevant for laser-based single-event effects (SEE) experiments are presented. The first approach uses a simple analytical expression incorporating a small number of experimental/material parameters while the second approach employs a comprehensive beam propagation method that accounts for all the complex nonlinear optical (NLO) interactions present. The impact of the excitation conditions, device geometry, and specific NLO interactions on the resulting collected charge in silicon devices is also discussed. These approaches can provide value to the radiation-effects community by predicting the impacts that varying experimental parameters will have on 2PA SEE measurements.