Graphene film on silicon carbide is considered to be promising material for high-frequency vacuum nanoelectronics. However, the possibility of graphene application in this area is still poorly understood. We have carried out the simulation of the electric field distribution in interelectrode gap of the anode-cathode system pointed field emission cathode based on silicon carbide with graphene film on its surface subject to the rounding-off radius of the top, interelectrode gap, height and cathode forming half-angle of the cone opening by the finite element method. The influence of constructional parameters on the electric field strength in the test structure was analyzed. It is shown that the values of rounding-off radius of the cone point and interelectrode distance has the biggest influence on the electric field in the investigated structure. Changing of the height and cathode forming half-angle of the cone opening does not lead to a significant increase or decrease of the electric field value.
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