Characterization of field-emission cathodes based on graphene films on SiC

Computing with volatile memristors: an application of non-pinched hysteresis

“…This model is practical for the description of real experiments. While the hysteretic graphene field emitter considered in this work requires high voltages for its operation (hundreds of volts), its switching voltages can be reduced down to a few tens of volts [28] reducing the gap between the electrodes. Two-terminal NEMS switches [21][22][23] provide a low-voltage alternative to high-voltage hysteretic graphene field-emission devices.…”

Planar nanosized field emission cathodes on the basis of graphene/semi-insulating silicon carbide fabricated by focused ion beam

“…Using of graphene as a material for planar field emission cathode with nanoscale interelectrode distance and rounding-off radius of the top allowed us to obtain electron emission at a low voltage of less than 1 V. This is significantly better results among nanocarbon field emission cathodes [26][27][28]. The results of current-voltage characteristics correlate with the results of field emission cathodes on the basis of graphene on SiC vertical type [6]. Low operating voltages can promote the using of nanoscale planar field emitters based on graphene on SiC in modern micro-and nanoelectronic devices.…”

“…The resistance to destructive factors, low threshold voltage and unique geometric dimensions of carbon nanomaterials make them attractive for field emission applications [1][2][3][4]. Graphene is one of carbon nanomaterials with high aspect ratio, small thickness and work function, excellent field emission, mechanical and thermal properties [5][6][7][8][9][10].…”