Modelling of the Influence of a Pointed Field Emission Cathode Design from the Silicon Carbide with Graphene Film on the Electric Field Strength

Abstract

Graphene film on silicon carbide is considered to be promising material for high-frequency vacuum nanoelectronics. However, the possibility of graphene application in this area is still poorly understood. We have carried out the simulation of the electric field distribution in interelectrode gap of the anode-cathode system pointed field emission cathode based on silicon carbide with graphene film on its surface subject to the rounding-off radius of the top, interelectrode gap, height and cathode forming half-angle of the cone opening by the finite element method. The influence of constructional parameters on the electric field strength in the test structure was analyzed. It is shown that the values of rounding-off radius of the cone point and interelectrode distance has the biggest influence on the electric field in the investigated structure. Changing of the height and cathode forming half-angle of the cone opening does not lead to a significant increase or decrease of the electric field value.

Planar nanosized field emission cathodes on the basis of graphene/semi-insulating silicon carbide fabricated by focused ion beam

“…The cathodes in the shape of the tip, the blade and matrix structures are of the greatest interest. Previously, it was found that interelectrode spacing and rounding-off radius of the top having the greatest impact on the electric field strength [17]. It was determined that achievement of a field strength 10 9 V/m in nanoscale field emission structures is possible at a potential difference of less than 10 V. The small size of field emission cathode allows to create a compact matrix structure with a high current density [18].…”