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Effect of deposition interruption and substrate bias on the structure of sputter-deposited yttria-stabilized zirconia thin films High-rate deposition of biaxially textured yttria-stabilized zirconia by dual magnetron oblique sputtering Studies on the properties of zirconia films prepared by direct current reactive magnetron sputtering Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr-Y target in Ar-02 mixtures. Hysteresis was observed as a function of oxygen flow rate f For a discharge current of 0.4 A and a total pressure P of 5 mTorr, for example, the target oxidized at f> 2.3 mllmin, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 mllmin. The deposition rate was 2.7 ,um/h in the metallicmodeandO.l,um/h in the oxide mode. Fully oxidized (Y 2 0 3 )01 (Zr0 2 )09 was obtained for f> 2.0 mllmin, even in the metallic mode. While films deposited with P = 3-20 mTorr were continuous, for P> 20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For P < 3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350°C. Temperature-dependent impedance spectroscopy analysis ofYSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected forYSZ.

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