Effect of deposition interruption and substrate bias on the structure of sputter-deposited yttria-stabilized zirconia thin films High-rate deposition of biaxially textured yttria-stabilized zirconia by dual magnetron oblique sputtering Studies on the properties of zirconia films prepared by direct current reactive magnetron sputtering Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr-Y target in Ar-02 mixtures. Hysteresis was observed as a function of oxygen flow rate f For a discharge current of 0.4 A and a total pressure P of 5 mTorr, for example, the target oxidized at f> 2.3 mllmin, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 mllmin. The deposition rate was 2.7 ,um/h in the metallicmodeandO.l,um/h in the oxide mode. Fully oxidized (Y 2 0 3 )01 (Zr0 2 )09 was obtained for f> 2.0 mllmin, even in the metallic mode. While films deposited with P = 3-20 mTorr were continuous, for P> 20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For P < 3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350°C. Temperature-dependent impedance spectroscopy analysis ofYSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected forYSZ.
Yttria-stabilized Bi203 (YSB) thin films have been deposited using reactive direct current (d.c.) magnetron cosputtering from Y and Bi targets. The films were deposited in argon/oxygen sputtering gas mixtures onto silica glass, NaC1, and MgO substrates. (Y203)~ (Bi203)~_= thin films with x = 0.25-0.5 were obtained under metalhc mode sputtering conditions, but were found to be ~10% oxygen deficient. Post-deposition annealing in air at T >~ 500~ led to fully stoichiometric films. X-ray diffraction and transmission electron microscope (TEM) studies showed that the structure of the annealed films was cubic with lattice parameters following Vegard's law. The films were dense as judged by scanning electron microscope (SEM) and TEM. Complex impedance spectroscopy measurements were carried out in air on x = 0.25 films with Ag-(La0.TSr03)CoO3 cermet electrodes. The temperature dependent ionic conductivity exhibited a knee point at Td ~ 870~ with activation energies of 1.2 eV below Td and 0.96 eV above Td, in good agreement with values for bulk YSB with the same composition. The interracial resistance of the cermet with 30 volume percent (v/o) Ag on a YSB electrolyte thin film was ~0.3 ~ cm 2 at 750~
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