An automated microwave characterization system has been developed to support process development, process control, and statistical design activities within a GaAs IC production facility. The system utilizes direct parameter extraction techniques in order to minimize the time requirements associated with small signal equivalent circuit model generation. Data manipulation and storage requirements have been addressed so that process and design engineers have rapid access to data and statistical summaries. Comprehensive software has been developed for efficient extraction of a broad range of non-linear GaAs MESFET model topologies. On-going investigations are aimed at further enhancing device characterization with direct large signal parameter extraction techniques and parameter correlations.
Epitaxial GaAs MESFETs with exceptionally low distortion and simultaneously high efficiency have been manufactured for use in linear power amplifier modules.When tuned for linearity, 15" devices exhibit Psat > 34.5dBm and PAE > 68% at Vds= 5.8V and 835MHz (single tone). With two tone average Pout = 30dBm, these devices exhibit PAE > 48%, IM3 < -35dBc, and IM5 < -45dBc.
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