Epitaxial GaAs MESFETs for high linearity, high efficiency wireless applications

Abstract

Epitaxial GaAs MESFETs with exceptionally low distortion and simultaneously high efficiency have been manufactured for use in linear power amplifier modules.When tuned for linearity, 15" devices exhibit Psat > 34.5dBm and PAE > 68% at Vds= 5.8V and 835MHz (single tone). With two tone average Pout = 30dBm, these devices exhibit PAE > 48%, IM3 < -35dBc, and IM5 < -45dBc.