SiO2 has been deposited pyrolytically on GaAs of different orientations. The effects of annealing on these samples has been investigated with XPS. Between SiO2 and GaAs, additional layers of Ga20.~ and As have been formed. Ga diffusion into SiO~ is found. Orientation effects are discovered: the Ga amount in SiOz rises in the sequence from (1 ] 1 )B over (111)A to (100) and the As accumulation at the interface is more pronounced for (100). A simple model for oxidation and diffusion is proposed.
Nickel disilicide (NiSi2 ) was formed on (100) oriented n-type Si-molecular beam epitaxial layers (Si-MBE) of various doping levels between 2×1016 and 13×1018 cm−3 and on substrates of 2×1019 cm−3 . Very low contact resistances were found and a low Schottky barrier of φBn =0.49 V was derived. A comparison with other commonly used contact materials shows NiSi2 to be highly favorable in this doping range.
This contribution gives an overview on the state of the art of Si/SiGe MMIC technology. IMPATT Diodes for transmitters, Schottky diodes for mixers and PIN diodes for switches at W-band frequencies and SiGe-HBTs for oscillators at Ka-band frequencies are integrated on high resistivity silicon substrate.
A planar radiating oscillator consisting of a planar resonant antenna and an W A T T diode monolithically inkgrated on a silicon substrate is presented. This oscillator k d s various applications in low-cost sensors, e.g., velocity sensors. The design tools are discussed and the calculated results are compared to measurements.
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