XPS Study of Annealed SiO2 / GaAs Interfaces

Sasse, E.

doi:10.1149/1.2119864

Cited by 33 publications

(3 citation statements)

References 14 publications

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“…There might be several reasons for this. First, as reported in [25], the small amount of Ga in the SiO 2 layer can only be recognized with Auger electron spectroscopy which we did not utilize. Second, in such LOC HPLD structures (table 1), for short periods of annealing and annealing temperatures performed in this study, Ga atoms may not have had time to penetrate throughout all of the SiO 2 layer.…”

Section: Resultsmentioning

confidence: 99%

“…In previous work on QWI, SIMS [21,22], RBS [23], x-ray photoelectron spectroscopy (XPS) [11], and proton induced x-ray emission has been used [24]. Earlier work has been done on doped bulk GaAs [24,25] and on single and multi-quantum wells grown on GaAs substrates solely to study diffusion [26]. Although many studies on IFVD QWI with standard low power structures have been performed, little work has been performed on actual large optical cavity (LOC) high power laser diode structures in AlGaAs/GaAs material systems [27].…”

Section: Introductionmentioning

confidence: 99%

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Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Kahraman

Gür

Aydınlı

2016

Semicond. Sci. Technol.

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We report on the correlation of atomic concentration profiles of diffusing species with the blueshift of the quantum well luminescence from both as-grown and impurity free quantum wells intermixed on actual large optical cavity high power laser diode structures. Because it is critical to suppress catastrophic optical mirror damage, sputtered SiO 2 and thermally evaporated SrF 2 were used both to enhance and suppress quantum well intermixing, respectively, in these (Al) GaAs large optical cavity structures. A luminescence blueshift of 55 nm (130 meV) was obtained for samples with 400 nm thick sputtered SiO 2. These layers were used to generate point defects by annealing the samples at 950 °C for 3 min. The ensuing Ga diffusion observed as a shifting front towards the surface at the interface of the GaAs cap and AlGaAs cladding, as well as Al diffusion into the GaAs cap layer, correlates well with the observed luminescence blue shift, as determined by x-ray photoelectron spectroscopy. Although this technique is well-known, the correlation between the photoluminescence peak blue shift and diffusion of Ga and Al during impurity free quantum well intermixing on actual large optical cavity laser diode structures was demonstrated with both x ray photoelectron and photoluminescence spectroscopy, for the first time.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Kahraman

Gür

Aydınlı

2016

Semicond. Sci. Technol.

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“…Several investigations have compared the various dielectrics in terms of their effectiveness in the encapsulation of GaAs. It was found from backscattering measurements (9), low temperature photoluminescence and Auger electron spectroscopy (AES) measurements (10), and also from an XPS study on annealed SiOJGaAs interfaces (11) that SiO~ films permit outdiffusion of Ga from GaAs. Such outdiffusion of Ga could result in nonstoichiometry near the GaAs--SiO~ interface, and could significantly affect the activation of carriers during a post-implant anneal.…”

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confidence: 99%

The Effect of Various Encapsulants on the Electrical Properties of Implanted Layers in GaAs

Rao

Koyama

1984

J. Electrochem. Soc.

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Reactively sputtered silicon nitride, plasma‐enhanced CVD silicon nitride, and silox have been investigated as dielectrics for the encapsulation of normalGaAs for the purpose of post‐implantation anneal. The effect of several treatments on the normalGaAs surface prior to dielectric deposition was analyzed by Auger spectroscopy and ellipsometry to characterize the high temperature annealability of the encapsulated samples. An ammonium hydroxide‐hydrogen peroxide etchant that leaves the surface clean and damage free was found to be the most suitable. After surface treatment and dielectric deposition, Van der Pauw devices were fabricated and carrier mobilities and sheet carrier concentrations for devices annealed at 800°C were compared. In specific cases, the electrical characteristics of devices annealed at higher temperatures (850° and 900°C) were also measured. Differences in the carrier mobilities and sheet carrier concentrations obtained, using the various dielectric films, have been explained in terms of the movement of a surface depletion layer edge closer to or away from the normalGaAs‐normaldielectric interface.

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Rapid Thermal Diffusion of Zinc in GaAs

Nowak

Kühn

Morgenstern

et al. 1991

Cryst. Res. Technol.

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Rapid thermal diffusion of zinc into semi-insulating GaAs from spin-on silica films was investigated for various temperatures and heating ratcs with halogen lamps as the heat source. Dependent on the heating rate two types of SIMS profiles were observcd. The degree of electrical activation of zinc was different as measured by the Hall effect. In some cases at high zinc concentrations, a ZnGa,O, film on the GaAs surface was formed.Es wird uber Experimente von Zink-Diffusion in halbisolierendes GaAs aus spin-on Schichten mit einem Halogenlampenofen berichtet. Diffusionstemperatur und Aulheizgeschwindigkeit wurden variiert. Es resultieren zwei Arten von SIMS-Profilen, die einen unterschiedlichen Grad der Zink-Aktivierung verkorpern. Bei einigen Proben wurde auf der Oberfllche die Bildung von ZnGa,O, beobachtet.

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XPS Study of Annealed SiO2 / GaAs Interfaces

Cited by 33 publications

References 14 publications

Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

The Effect of Various Encapsulants on the Electrical Properties of Implanted Layers in GaAs

Rapid Thermal Diffusion of Zinc in GaAs

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