Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Kahraman, Abdullah; Gür, Emre; Aydınlı, Atilla

doi:10.1088/0268-1242/31/8/085013

Cited by 5 publications

(3 citation statements)

References 32 publications

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“…Among mentioned methods, RFMS and MOCVD growth methods are probably the only methods which are currently and effectively used in industry. Especially, MOCVD holds its position on all of the epitaxial growth of LEDs and laser diodes in all colors (blue, green, red) [14][15][16] and high power infrared laser diode industry [17]. On the other hand, RFMS growth methods are also leading many important coating industries.…”

Section: Large Area and Continues 2d Materials Growth Methodsmentioning

confidence: 99%

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Acar¹,

Gür²

2021

Turk J Phys

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Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS 2 , WS 2 , MoSe 2 and WSe 2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.

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Section: Large Area and Continues 2d Materials Growth Methodsmentioning

confidence: 99%

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Acar¹,

Gür²

2021

Turk J Phys

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“…One of the most promising QWI approaches is impurity-free vacancy disordering (IFVD) since it does not introduce additional impurities and hence eliminates free carrier absorption losses and, in the ideal case, preserves epitaxial quality [6]. The IFVD process requires the deposition of a dielectric cap to control the degree of intermixing to be enhanced or suppressed with the appropriate dielectric materials and annealing temperature [7,9,[13][14][15][16][17]. The vacancy disordering is mainly affected by the dielectric film and the thermal stress executed by the dielectric film on the semiconductor [18].…”

Section: Introductionmentioning

confidence: 99%

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

Arslan

Demir

Şahin

et al. 2018

Semicond. Sci. Technol.

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In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO 2 and Si x O 2 /SrF 2 (versus SrF 2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O 2 layer compensates for the large thermal expansion coefficient mismatch of SrF 2 with the semiconductor and mitigates the detrimental effects of SrF 2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.

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“…The dielectric cap controls the degree of intermixing that can be enhanced or suppressed with the appropriate dielectric material and annealing temperature. For InGaAs, GaAs or AlGaAs QW materials, SiO 2 and Si 3 N 4 have been reported to induce disordering, whereas Si 3 N 4 , TiO 2 and SrF 2 have been commonly used for the suppression of intermixing 8,9,[12][13][14][15] . SiO 2 was demonstrated to enhance and suppress intermixing by varying its stoichiometry through modification of flow rates in plasma enhanced chemical vapor deposition (PECVD) systems 16 .…”

Section: Introductionmentioning

confidence: 99%

IFVD-based large intermixing selectivity window process for high power laser diodes

Arslan

Şahin

Demir

et al. 2018

Semiconductor Lasers and Laser Dynamics VIII

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Catastrophic optical mirror damage (COMD) is a key issue in semiconductor lasers and it is initiated by facet heating because of optical absorption. To reduce optical absorption, the most promising method is to form non-absorbing mirror structures at the facets by obtaining larger bandgap through impurity-free vacancy disordering (IFVD). To apply an IFVD process while fabricating high-power laser diodes, intermixing window and intermixing suppression regions are needed. Increasing the bandgap difference (ΔE) between these regions improves the laser lifetime. In this report, SrF 2 (versus Si x O 2 /SrF 2 bilayer) and SiO 2 dielectric films are used to suppress and enhance the intermixing, respectively. However, defects are formed during the annealing process of single layer SrF 2 causing detrimental effects on the semiconductor laser performance. As an alternative method, Si x O 2 /S r F 2 bilayer films with a thin Si x O 2 dielectric layer is employed to obtain high epitaxial quality during annealing with small penalty on the suppression effect. We demonstrate record large ΔE of 125 meV. Broad area laser diodes were fabricated by the IFVD process. Fabricated high-power semiconductor lasers demonstrated conservation of quantum efficiency with high intermixing selectivity. The differential quantum efficiencies are 81%, 74%, 66% and 46% for as grown, bilayer protected, SrF 2 protected and QWI lasers, respectively. High power laser diodes using bilayer dielectric films outperformed single-layer based approach in terms of the fundamental operational parameters of lasers. Comparable results obtained for the as-grown and annealed bilayer protected lasers promises a novel method to fabricate high power laser diodes with superior performance and reliability.

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Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Cited by 5 publications

References 32 publications

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

IFVD-based large intermixing selectivity window process for high power laser diodes

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