Sputtered 2D transition metal dichalcogenides: from growth to device applications

Abstract

Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS 2 , WS 2 , MoSe 2 and WSe 2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.

Highly Responsive Pd-Decorated MoO3 Nanowall H2 Gas Sensors Obtained from In-Situ-Controlled Thermal Oxidation of Sputtered MoS2 Films

“…As shown in Figure 2e,g, the thickness of walls is approximately about 10 nm making oxidation easier. In addition, sputter-grown MoS 2 films are highly sulfur-deficient, 60 and this might be helpful for the oxidation process. XRD patterns show that the edge plane (100) is almost diminished in the partially oxidized MoS 2 / MoO 3 sample.…”

Investigating the Electrical Transport and Photoresponse Properties of WSe2 and a Thermally Engineered SrTiO3-Based Heterojunction

“…Unlike widely known mechanical exfoliation techniques of 2D materials, sputtered thin films are known to show much more repeatable, scalable, and reliable results. 19…”

“…On this surface, a WSe 2 thin film is fabricated by the direct-current (dc) magnetron sputtering technique. Unlike widely known mechanical exfoliation techniques of 2D materials, sputtered thin films are known to show much more repeatable, scalable, and reliable results . Electrical transport characteristics such as current–voltage–temperature ( I – V – T ), capacitance–voltage–temperature ( C – V – T ), capacitance–voltage–frequency ( C – V – f ), and its photoresponse have been studied in this report.…”

“…These are bonded by weak out-of-plane vdW forces between two adjacent layers. Tungsten diselenide (WSe 2 ), being a heavier 2D-layered transition-metal dichalcogenide material, possesses better electrical conductivity and high photoconversion efficiency, which makes it a suitable material for optoelectronic, semiconductor diodes and energy storage applications. − Impressive levels of performance have been achieved from WSe 2 -based electronic devices. , A WSe 2 /SnSe 2 heterojunction was reported by Li et al with a very high rectification ratio of 3 × 10 8 . Tang et al reported a WSe 2 -based multilayer transistor that also exhibited a very high rectification ratio of 10 8 …”