The electron and current-density distributions in the close proximity of quantum point contacts ͑QPCs͒ are investigated. A three-dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the ͑deeply͒ etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the nonlinear regime.
The output power of modern 975 nm GaAs-based broad area diode lasers is limited by increasing carrier and photon losses at high bias. We use experiment and one-dimensional calculations on these devices to reveal that higher current densities (and hence higher local recombination rates and higher losses) arise near the front facet due to spatial hole burning and that the non-uniformity is strongly affected by laser geometry, which is more severe for longer resonators and less severe for higher front facet reflectivity. Specifically, we use devices with a segmented p-contact to directly measure the current distribution along the resonator and compare this with laser simulation. Devices with a 6 mm resonator show 29% more current at the front than back, twice as large as the 15% current non-uniformity in devices with a 3 mm resonator. In contrast, increased front facet reflectivity (20% rather than 0.8%) is shown to almost halve the current non-uniformity from 29% to 18% in devices with a 6 mm resonator and reduces power saturation. Although the magnitude of current non-uniformity in experiment and theory is broadly consistent, in experiment, an additional divergence is seen in current flow (and hence recombination rate) near the facets, and earlier power saturation occurs. We discuss the possible saturation mechanisms that are not included in the simulation.
Several factors limit the reliable output power of a semiconductor laser under CW operation, such as carrier leakage, thermal effects, and catastrophic optical mirror damage (COMD). Ever higher operating powers may be possible if the COMD can be avoided. Despite exotic facet engineering and progress in non-absorbing mirrors, the temperature rise at the facets puts a strain on the long-term reliability of these diodes. Although thermoelectrically isolating the heat source away from the facets with non-injected windows helps lower the facet temperature, data suggests the farther the heat source is from the facets, the lower the temperature. In this letter, we show that longer non-injected sections lead to cooler windows and biasing this section to transparency eliminates the optical loss. We report on the facet temperature reduction that reaches below the bulk temperature in high power InGaAs/AlGaAs lasers under QCW operation with electrically isolated and biased windows. Acting as transparent optical interconnects, biased sections connect the active cavity to the facets. This approach can be applied to a wide range of semiconductor lasers to improve device reliability as well as enabling the monolithic integration of lasers in photonic integrated circuits.
In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO 2 and Si x O 2 /SrF 2 (versus SrF 2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O 2 layer compensates for the large thermal expansion coefficient mismatch of SrF 2 with the semiconductor and mitigates the detrimental effects of SrF 2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.
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