Doping dependence of the specific contact resistance of NiSi2 on (100) <i>n</i>-Si

Sasse, E.

doi:10.1063/1.341375

Cited by 2 publications

(2 citation statements)

References 17 publications

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“…However, lower contact resistance can also be realized by lowering the Schottky barrier at the metal-Si interface. The latter is especially useful for contacts where high doping levels are undesirable [1,2]. In principle, the Schottky barrier height between metal and semiconductor is determined by the difference in metal work function and semiconductor electron affinity.…”

Section: Introductionmentioning

confidence: 99%

Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Zhu

Yang

Tao

2007

J. Phys. D: Appl. Phys.

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Low-resistance Ohmic contacts fabricated by selenium passivation between titanium and n-type silicon (1 0 0) substrates have been characterized by the four-point probe and circular transmission line method. Selenium passivation terminates dangling bonds on the Si(1 0 0) surface and reduces the Schottky barrier height between Ti and n-type Si(1 0 0) substrates. Sheet resistance of the Ti–Si contacts on Se-passivated 1019 cm−3 doped Si substrates shows a ∼30% reduction as compared with control samples. Accordingly, the extracted contact resistance is reduced by about an order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 29-times reduction in contact resistivity is achieved by Se passivation on highly-doped Si-on-insulator substrates with a 500 Å un-doped Si buffer layer.

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Section: Introductionmentioning

confidence: 99%

Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Zhu

Yang

Tao

2007

J. Phys. D: Appl. Phys.

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show abstract

“…However, lower contact resistance can also be realized by lowering the Schottky barrier at the metal-Si interface. The later technique is especially useful for contacts where high doping levels are undesirable (1,2). Theoretically, the Schottky barrier height between metal and semiconductor is determined by the difference between metal work function and semiconductor electron affinity.…”

Section: Introductionmentioning

confidence: 99%

Low-resistance Ti/n-type Si(100) Contacts by Monolayer Se Passivation

2006

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Low-resistance contacts fabricated by selenium passivation between Ti and n-type Si(100) substrates have been characterized by low-temperature I-V, four-point probe and circular transmission line methods. The Ti-Si contacts on Se-passivated samples demonstrate a significant reduction in Schottky barrier height over control samples in low-temperature I-V. Sheet resistance of the contacts on Se-passivated 10 19 cm -3 doped n-type Si (100) substrates shows a 30% reduction as compared with control samples. Accordingly, the extracted contact resistance decreases by about one order of magnitude for samples with different Ti thicknesses and different annealing temperatures. A 125%-2900% reduction in contact resistivity is achieved by Se passivation on highly-doped n-type SOI substrates with 500 Å un-doped Si buffer layer. The reduction in contact resistance is attributed to the minimization of interface states between Ti and Si(100) surface.

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Doping dependence of the specific contact resistance of NiSi2 on (100) n-Si

Cited by 2 publications

References 17 publications

Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Low-resistance Ti/n-type Si(100) Contacts by Monolayer Se Passivation

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