Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Zhu, Jiaxing; Yang, Xiaolong; Tao, Meng

doi:10.1088/0022-3727/40/2/031

Cited by 13 publications

(7 citation statements)

References 16 publications

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“…Lowering of Schottky barrier height by valence mending is not limited to Al as the metal or S as the passivating agent. A similar lowering effect has been observed between Ti and n-type Si(100) surface by MBE Se passivation (18). In that case, a reduction of ~0.2 eV in barrier height, from no more than 0.3 eV for Ti contacts on n-type Si(100) surface without Se passivation to no more than 0.1 eV with Se passivation, is achieved.…”

Section: Low Schottky Barriers For Electronssupporting

confidence: 75%

Integration Issues in Metallic Source/Drain Nanoscale CMOS

2007

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The performance of Schotky source/drain nanoscale CMOS is critically dependent on a low barrier between metal and Si. Low Schottky barriers have been recently realized with various metals on selenium or sulfur passivated Si(100) surface, with a ~0-eV barrier height for electrons and a ~0.17-eV barrier height for holes demonstrated. Several issues need to be addressed for integration of these low Schottky barriers into Schottky source/drain CMOS. This paper reports our recent results on low Schottky barriers on n-type and p-type Si(100) surface, thermal stability of these low Schottky barriers upon annealing, and self-aligned integration of these low-barrier metallic source/drain into nanoscale CMOS. Electrical characterization suggests that these low Schottky barriers are thermally stable to ~400 C. A self-aligned fabrication process involving chemical mechanical polishing is proposed for these metallic source/drain CMOS devices.

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Section: Low Schottky Barriers For Electronssupporting

confidence: 75%

Integration Issues in Metallic Source/Drain Nanoscale CMOS

2007

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“…To make it ohmic, high-doped n-region is preferred which makes the processing complex. Many literatures have suggested for Ti/Au contact in which Ti is for adhesive as well as barrier lowering with Si and Au for low resistivity of contact 79 . We performed experiment with Ti/Au layering on n-Si using sputtering method.…”

Section: Resultsmentioning

confidence: 99%

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Srivastava

Mishra

Kumar

2020

Sci Rep

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Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. integration of a phase-change material (pcM) with HS can tremendously extend the operating and application range using the "phase-tuning" of pcM for any optoelectronic devices. in the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge 2 Sb 2 te 5 (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. the changes in optical properties are analysed using ellipsometry, UV-Vis-niR and Raman spectroscopy to speculate the optoelectronic behaviour of GSt/Si samples. the optical and electrical characterization were analysed with aluminium (Al), platinum (pt) and ti/ Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with < 1,000 photocurrent to dark-current ratio is demonstrated in wavelength range of 0.8-2 μm under moderate range of biasing under ~ μW source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvinprobe force microscopy and carrier density measurement by Hall experiment. our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits. Heterostructures have received intensive attentions due to their excellent intrinsic properties and wide applications ever since their emergence at very dawn of semiconductor (SC) technology in 1932 1. Heterostructures (HS), especially heterojunctions, juxtapose two different layers of materials which usually are of different materials having different properties. If the two materials are of same type (n-n or p-p) then it is called as "isotype" otherwise known as "anisotype" (e.g. n-p type) 2. Both types of the HS have their different potential applications 3. Fundamentally, instead of controlling the electrical parameters of a semiconductor by external doping and carrier injection, heterostructures can inherit different material properties of two layers e.g. controlling the charge transfer at the interface and controlling the fundamental parameters such as bandgap, effective masses, mobilities, refractive indices, etc., in the semiconductor based devices 4. Nowadays, scientists/researchers are more interested in the interactions at the junction interface to improve the performance and sometimes synergistic properties as well 5. HS are widely used as the basic building blocks in conventional devices such as photodiodes 6 , solar cells 7 , LEDs 8 , as well as in complicated struc...

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“…If the resistance of the vacuum gap changed significantly, that would cause a significant increase in the current at high voltage in the I-V curves, which is not observed. However, for substrates with doping concentrations of ~10 17 cm -3 , the junction resistance at the TiSi 2 /Si interface is ~50 to 100 kΩ [55], which is similar in magnitude to the quantum of resistance. The Schottky barrier height of nanoscale islands has been shown to be lowered significantly [27,30] relative to the bulk barrier height.…”

Section: (B) To 5(d)mentioning

confidence: 88%

Titanium silicide islands on atomically clean Si(100): Identifying single electron tunneling effects

Tedesco

Rowe

Nemanich

2010

Journal of Applied Physics

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Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (< 2 nm) on atomically clean Si(100) substrates followed by annealing to ~800ºC. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy have been performed on these islands to record current-voltage (I-V) curves. Because each island forms a double barrier tunnel junction (DBTJ) structure with the STM tip and the substrate, they would be expected to exhibit single electron tunneling (SET) according to the orthodox model of SET.Some of the islands formed are small enough (diameter < 10 nm) to exhibit SET at room temperature and evidence of SET has been identified in some of the I-V curves recorded from these small islands. Those curves are analyzed within the framework of the orthodox model and are found to be consistent with that model, except for slight discrepancies of the shape of the I-V curves at current steps. However, most islands that were expected to exhibit SET did not do so, and the reasons for the absence of observable SET are evaluated. The most likely reasons for the absence of SET are determined to be a wide depletion region in the substrate and Schottky barrier lowering due to Fermi level pinning by surface states of the clean silicon near the islands.The results establish that although the Schottky barrier can act as an effective tunnel junction in a DBTJ structure, the islands may be unreliable in future nanoelectronic devices. Therefore, methods are discussed to improve the reliability of future devices.

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Low-resistance titanium/n-type silicon (1 0 0) contacts by monolayer selenium passivation

Cited by 13 publications

References 16 publications

Integration Issues in Metallic Source/Drain Nanoscale CMOS

Integration Issues in Metallic Source/Drain Nanoscale CMOS

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Titanium silicide islands on atomically clean Si(100): Identifying single electron tunneling effects

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