Abstract:The performance of Schotky source/drain nanoscale CMOS is critically dependent on a low barrier between metal and Si. Low Schottky barriers have been recently realized with various metals on selenium or sulfur passivated Si(100) surface, with a ~0-eV barrier height for electrons and a ~0.17-eV barrier height for holes demonstrated. Several issues need to be addressed for integration of these low Schottky barriers into Schottky source/drain CMOS. This paper reports our recent results on low Schottky barriers… Show more
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