Si/SiGe MMIC technology

Luy, J.-F.; Strohm, K.M.; Sasse, E.

doi:10.1109/mwsym.1994.335102

Cited by 8 publications

(1 citation statement)

References 3 publications

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“…Passive components on low-resistivity silicon substrates are big technological challenges under microwave operations due to the insufficient resistivity of common silicon. In J F Luy's research, high-resistivity silicon substrate ( >2500 cm) had been demonstrated to be adequate for microwave application [1] . However, the passive elements occupy areas is large on high-resistivity silicon, the loss is high still.…”

Section: Introductionmentioning

confidence: 99%

MEMS Phase Shifters On Low-resistivity Silicon Wafer

Guo

Zhang

Lin

et al. 2006

2006 International Conference on Mechatronics and Automation

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The basic structure of MEMS millimeter-wave phase shifters was consisted of a coplanar wave-guide (CPW) transmission line periodically loaded with several thin metallic membranes. A new method was developed to obtain lower-loss microwave coplanar waveguide (CPW) by means of forming porous silicon (PS) on low-resistivity silicon wafer. The CPW fabricated on porous silicon (PS) / oxidated porous silicon (OPS) coated with polyimide had demonstrated lower loss than 0-7.5dB/1.2cm in 0-40GHz, and comparison with quartz, lowresistivity silicon and multi-structure of poly-Si/SiO 2 on highresistivity silicon in measure and analysis.Index Terms -PS substrate MEMS CPW phase shifters polyimid, insertion loss.

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Section: Introductionmentioning

confidence: 99%