Mixed-mode circuit simulation with full-wave analysis of interconnections

Ciampolini, P.; Roselli, L.; Stopponi, G.

doi:10.1109/16.641390

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…Current characteristics are calculated directly by substituting the numerical results in the discretized form of (5) and (6), and then integrate it over the anode contact. The calculated results present a good agreement with those obtained in [15].…”

Section: Stationary Simulation Resultssupporting

confidence: 86%

“…In the cell (i + 1/2, j), we solve drift-diffusion model and Maxwell's equations, where Equation (15) is adopted to combine between the two model to update the electric and magnetic fields. This algorithm can be efficiently carried out in the tree steps [15,17]:…”

Section: Z mentioning

confidence: 99%

“…Step 1: update magnetic field components H using (14) Step 2: solve semiconductor device using (10), (11), (12) and (15) Step 3: update electric field components E using (13) End time iterations…”

Section: Z mentioning

confidence: 99%

See 2 more Smart Citations

Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

Labiod¹,

Latreche²,

Bella³

et al. 2011

JEMAA

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In this work, we present a numerical model to solve the drift diffusion equations coupled with electromagnetic model, where all simulations codes are implemented using MATLAB code software. As first, we present a one-dimensional (1-D) PIN diode structure simulation achieved by solving the drift diffusion model (DDM). Backward Euler algorithm is used for the discretization of the proposed model. The aim is to accomplish time-domain integration. Also, finite different method (FDM) is considered to achieve space-Domain mesh. We introduced an iterative scheme to solve the obtained matrix systems, which combines the Gummel’s iteration with an efficient direct numerical UMFPACK method. The obtained solutions of the proposed algorithm provide the time and space distribution of the unknown functions like electrostatic potential and carrier’s concentration for the PIN diode. As second case, the finite-difference time-domain (FDTD) technique is adopted to analyze the entire 3-D structure of the stripline circuit including the lumped element PIN diode. The microwave circuit is located in an unbounded medium, requiring absorbing boundaries to avoid nonphysical reflections. Active device results were presented and show a good agreement with other reference. Electromagnetic results are qualitatively in agreement with other results obtained using SILVACO-TCAD

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Section: Stationary Simulation Resultssupporting

confidence: 86%

Section: Z mentioning

confidence: 99%

See 1 more Smart Citation

Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

Labiod¹,

Latreche²,

Bella³

et al. 2011

JEMAA

View full text Add to dashboard Cite

show abstract

FDTD analysis of photoconducting antennas for millimeter-wave generation

Zhang

Chen

Chen³

2000

Int J RF and Microwave Comp Aid Eng

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In this paper, a hybrid numerical technique is presented for modeling a photoconducting antenna structure designed for optoelectronic generation of millimeter waves. The technique interfaces the solid‐state device model with the three‐dimensional (3D) finite‐difference time‐domain (FDTD) method to achieve the active antenna modeling effectiveness and efficiency. The FDTD algorithm is applied to simulate the passive part of the antenna structure, whereas the numerical device simulation is employed to model the photoconductor that is illuminated by lasers. Physical performance of the photoconductor and response of the antenna are analyzed. Numerical results show good correlation with the experimental result and consequently demonstrate the feasibility of the full‐wave modeling. © 2000 John Wiley & Sons, Inc. Int J RF and Microwave CAE 10: 213–220, 2000.

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A new approach to FET model scaling and MMIC design based on electromagnetic analysis

Cidronali

Collodi²,

Vannini³

et al. 1999

IEEE Trans. Microwave Theory Techn.

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Abstract-A new approach, using electromagnetic analysis, is proposed for field-effect transistor model scaling and monolithicmicrowave integrated-circuit (MMIC) design. It is based on an empirical distributed modeling technique where the active device is described in terms of an external passive structure connected to a suitable number of internal active sections. On this basis, an equivalent admittance matrix per gate unit width is obtained which, as confirmed by experimental results provided in this paper, is consistent with simple scaling rules. The same technique can also be adopted for a "global approach" to MMIC design where complex electromagnetic phenomena are also taken into account. An example of application concerning this aspect is presented.

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Mixed-mode circuit simulation with full-wave analysis of interconnections

Cited by 7 publications

References 13 publications

Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

FDTD analysis of photoconducting antennas for millimeter-wave generation

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

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