Organic photodetectors with inverted structure are fabricated by solution process techniques. A very thin interfacing layer of polyethyleneimine leads to a homogenous interface with low work function. The devices exhibit excellent performances, in particular in terms of low dark current density, wide range linearity, high detectivity, and remarkable stability in ambient air without encapsulation.
This paper presents a new top-down method to fabricate Ge-rich nanowires for multi-channel devices by Ge enrichment technology. 3 dimensional Ge nanowire stacks have been fabricated and characterized by SEM, TEM, EDX. Nanowires obtained are single crystalline with no crystalline defects observed on cross-sectional TEM pictures. The main advantage of this method is that the shape, the size and the concentration of Ge nanowires can be tuned by process parameters. Indeed, depending on these parameters, nanowires with a Ge content up to 100% can be obtained with a very aggressive diameter (as low as 10nm). Moreover, this technology allows the co-integration of Ge and Si nanowires for pMOS and nMOS devices, respectively.
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