Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

Py, M.; Saracco, E.; Damlencourt, J.-F.; Barnes, Jean‐Paul; Fabbri, J.M.; Hartmann, Jean‐Michel

doi:10.1016/j.apsusc.2011.06.021

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Sims and Tof-sims Applications2

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Cited by 6 publications

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“…The method of extended full spectrum TOF-SIMS was described in two papers by Py et al 264,265 Both SIMS and TOF-SIMS can suffer from non-linearity of relative sensitivity factors when profiling through films with various compositions and this can especially be the case when the material under investigation is silicon germanide layers on silica. The use of the extended full spectrum method helps minimize these interferences.…”

Section: Sims and Tof-sims Applicationsmentioning

confidence: 99%

“…One study (ref. 264) described its use during the quantitative depth-profiling of both matrix elements (Ge, O and Si) and of contaminants (C) in Si(0.82)Ge(0.16)C(0.02) materials annealed in an oxidizing atmosphere. The accuracy and precision of the data obtained using the method were compared with those obtained using another technique (conventional SIMS) and were both superior, even under the optimal SIMS operating conditions.…”

Section: Sims and Tof-sims Applicationsmentioning

confidence: 99%

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