Electrical characteristics and simulations of self-switching-diodes in SOI technology

Semiconductor Surface State Engineering for THz Nanodevices

“…The SSD device has been demonstrated using heterostructures where the 2DEG is presented such as systems based on InAlAs/InGaAs and AlGaAs/GaAs multilayer structures [21,22]. The working principle of the device is not dependent on the 2DEG properties, allowing to be fabricated in bulk materials like silicon [23] and transparent semiconductors like ZnO and indium tin oxide (ITO) [24,25], and graphene-based SSD has been also demonstrated [26]. Those devices have exhibited the ability to detect extremely weak signals without applied bias [27,28]; their high sensitivity [29] and their capability to operate in the terahertz regime [27,30] make the SSD concept a rewarding tool that has opened a broad range of applications that support the THz gap filling.…”

“…With the aim of determining the SSD current-voltage behavior (I-V), we employed a commercial physically based device simulator in two-dimensional mode, similar to that reported for 2DEG-based InGaAs SSD and silicon-oninsulator structures [23,30,31]. In this model, only the 2DEG layer geometry resulted after the lithography process is analyzed.…”

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

“…As a first approach, we use a twodimensional model as that reported for 2DEG-based InGaAs SSD 8,23 and SOI 16 structures. The analysis was performed on InAlAs/InGaAs heterostructures whose layered sequence is described by Song et al 15 Numerical simulations were run (at room-temperature) by introducing a background doping n = 1x10 17 cm −3 , an electron mobility µ = 12000 cm 2 /Vs and the impurity scattering set to off.…”

“…14 This concept has been explored using two-dimensional electron gas (2DEG) systems such as InAlAs/InGaAs 14 and AlGaAs/GaAs 7 heterostructures; but the work principle is not entirely based on the 2DEG properties. As far as known, these types of devices have been fabricated in bulk materials like Silicon, 16 transparent semiconductors like ZnO 17 and ITO; 18 and recently a graphene-based SSD has been demonstrated. [19][20][21] In this regard, the most explored channel's geometry presenting a self-switching behavior has been until now the L-shape channel.…”

Análisis de efectos de carga superficial en nanodispositivos semiconductores modelizados mediante simulaciones Monte Carlo

“…ramas o canales en forma de T y de Y (TBJs and YBJs, Three-Terminal Ballistic Junctions or T-and Y-Branch Junctions), cuyo funcionamiento se ha demostrado experimentalmente por diferentes autores. Recientemente se ha propuesto también un dispositivo denominado diodo autoconmutante (SSD, Self-Switching Diode), [48][49][50][51][52][53][54] cuya base de funcionamiento reside en la apertura o cierre de un nanocanal como consecuencia de los efectos de la carga superficial en sus fronteras. Además bajo ciertas condiciones de polarización estos diodos presentan fenómenos de histéresis en la característica I-V que pueden utilizarse para fabricar dispositivos de memoria (SSM, Self-Switching Memory).…”