This letter mainly focuses on providing theoretical justification for possible gallium-nitride (GaN) device linearity improvement, interpreting the key physical origins of third-order distortion (IMD3). Based on the bias-dependent S-parameter measurement data of field-plate (FP)-free 8 × 125 µm GaN highelectron mobility transistor (HEMT), IMD3 is modeled using classical Volterra series theory. Through this technique, device diagnosis is carried out for efficiently localizing the distortion behavior. Further, device linearity is shown to improve by appropriately tuning the gate-drain feedback capacitance by taking advantage of FP technology proving the analysis to be a powerful tool for developing GaN HEMT technology.Index Terms-Active gallium-nitride (GaN) high-electron mobility transistor (HEMT), distortion vectors, field plate (FP), linearity, third-order distortion (IMD3), Volterra model.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.