High-Efficiency Input and Output Harmonically Engineered Power Amplifiers

Sharma, Tushar; Srinidhi, E. R.; Darraji, Ramzi; Holmes, Damon G.; Staudinger, Joseph; Jones, Jeffrey K.; Ghannouchi, Fadhel M.

doi:10.1109/tmtt.2017.2756046

Cited by 75 publications

(34 citation statements)

References 29 publications

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“…It is necessary to optimize the input harmonics to shape the waveform of V gs and improve the efficiency of the FET. The input second harmonic is predominant in the distortion of V gs , and the third and higher input harmonics can be ignored under large-signal operation [10]. Figure 3 shows the input second-harmonic source-pull results based on continuous class B mode when α = 0 and α = 1 at 10.5 GHz, when the fundamental source impedance is conjugation-matched.…”

Section: Input Second Harmonic Tuned In Continuous Class B Mode For Ementioning

confidence: 99%

“…However, when the nonlinear characteristics of field-effect transistors (FETs) were taken into consideration, the load-line method proposed by Cripps was not able to predict the FET efficiency [9]. Moreover, some studies showed that input harmonics have an important impact on the efficiency of PAs [10,11]. Furthermore, input harmonics can lead to a decrease in the efficiency of measurement results with different input harmonics [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Jin

Gao²,

Chen

et al. 2019

Electronics

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This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 µm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51-59% PAE (Power Added Efficiency) and 19.8-21.2 dB power gain with a saturated power of 40.8-42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm 2 .

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Section: Input Second Harmonic Tuned In Continuous Class B Mode For Ementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Jin

Gao²,

Chen

et al. 2019

Electronics

View full text Add to dashboard Cite

show abstract

“…Despite many broadband continuous mode PAs have been reported, 3‐6 the output matching network design for broadband continuous mode operation is challenging as specific impedance requirements are enforced to guarantee the performance. The existing designs mainly rely on load‐pull measurement and mostly are implemented with microstrip lines or filter‐based matching networks 7‐9 .…”

Section: Introductionmentioning

confidence: 99%

LC resonant circuits based matching networks for continuous mode MMIC power amplifiers

Zhu

2020

Micro & Optical Tech Letters

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This article presents a practical design methodology to construct output matching networks for broadband continuous mode monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). Unlike conventional harmonic manipulation approaches, combinations of parallel and series LC resonant circuits are utilized to build the matching networks as it can generate frequencydependent components and locate the varying impedance of continuous mode. With a proper design, the impedance variation in frequency domain can be mapped to the frequency response of the matching network at the fundamental frequency and the second harmonic simultaneously. Matching network design procedures are demonstrated and results show that the frequency response of the network has very good approximation with the desired continuous mode conditions. A prototype PA is implemented on 0.25-μm gallium nitride (GaN) MMIC process, and tested with both continuous-wave and modulated signals. Measurement results show 50.82% maximum drain efficiency and 8.5 dB gain can be achieved across the operation bandwidth of 5.4 to 6.4 GHz.

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“…Power amplifier (PA) is one of the most important components in Radio Remote Unit (RRU), its performance strongly influence the whole system performance in terms of bandwidth, output power, and efficiency. 1,2 The PA module contributes over 65% of the energy usage in RRU, to improve the efficiency of the PAs and meet the power consumption requirement of the system, several kinds of design method is proposed, such Class-E, [3][4][5] Class-J, 6,7 Class-F, [8][9][10] and Doherty. 11,12 Although the working principle of those methods is difference, they all follow the same principles that minimum the output harmonic energy and the heat loss of transistor.…”

Section: Introductionmentioning

confidence: 99%

1.6‐2.6 GHz continuous Class‐F power amplifier with gain and power‐added efficiency flatness enhancement by negative feedback structure

Luo

Feng

et al. 2019

Micro & Optical Tech Letters

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This article studies the feasibility of applying negative feedback structure in continuous Class‐F power amplifiers to improve the gain and efficiency flatness. The operation principle of the negative feedback structure under small and large signal input states is presented. The gain and efficiency are increased at high frequency part and decreased at low frequency by introducing the negative feedback structure, and the flatness is improved. Multiharmonic bilateral pull is used to obtain the optimum impedances, to reduce the interaction between source and load side, and the influence of parasitic parameters. A highly flatness amplifier with the negative feedback structure is designed operating at 1.6‐2.6 GHz by using a Cree GaN HEMT CGH40010H device. The measurement results show a gain flatness of 1.1 dB, and a power‐added efficiency flatness of 9%.

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High-Efficiency Input and Output Harmonically Engineered Power Amplifiers

Cited by 75 publications

References 29 publications

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

LC resonant circuits based matching networks for continuous mode MMIC power amplifiers

1.6‐2.6 GHz continuous Class‐F power amplifier with gain and power‐added efficiency flatness enhancement by negative feedback structure

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