A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series Analysis

Srinidhi, E. R.; Jarndal, Anwar; Kompa, G.

doi:10.1109/led.2007.895387

Cited by 10 publications

(3 citation statements)

References 5 publications

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“…The gate field plate also increases the gate feedback capacitance C gd (see Table ), which results in gain drop as it can be noted from the magnitude of S 21 in Figure with respect to the corresponding one in Figure . It is reported also that this increase of C gd , improves the linearity of the device . Similarly, the effect of the source field plate is reflected on the extracted values of C ds , C gs , and R s .…”

Section: Physical Validationmentioning

confidence: 53%

AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective

Jarndal

2013

Int J RF and Microwave Comp Aid Eng

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In this article, small-signal modeling approaches for GaN HEMTs on SiC and Si substrates have been developed. The main advantage of these approaches is their accuracy, reliability, and dependency on only cold S-parameter measurements to extract the parasitic elements of the device. The proposed equivalent circuit model for GaN on Si HEMT considers extra effects due to parasitic conduction through substrate or buffer layers. S-parameter measurements at different bias conditions in addition to physical based analysis have been used to validate the accuracy and reliability of the developed modeling methods.

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Section: Physical Validationmentioning

confidence: 53%

AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective

Jarndal

2013

Int J RF and Microwave Comp Aid Eng

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“…Content may change prior to final publication. union (16,25) of 0.12% corresponding to the 16 th and 25 th marked point frequencies from left to right in Fig. 26 (c).…”

Section: Order Reduced Processing For Multi-sourcementioning

confidence: 99%

“…The output signals are expressed as a high-order polynomial, which is a function of input signals [13]- [15]. The second one is the Volterra series for nonlinear systems with memory [16]- [19]. The third one is the Recurrent Neural Network (RNN) for complex nonlinear circuits [20]- [22].…”

Section: Introductionmentioning

confidence: 99%

A New Electromagnetic Emission Source Frequency and Factor Identification Approach for Nonlinear Circuits From the Output Spectrum Data

Yang

et al. 2020

IEEE Access

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For the practical nonlinear circuits, a number of new frequencies are generated in the output spectrum, which makes electromagnetic interference location quite challenging. To mitigate this problem, an approach is proposed to identify the electromagnetic emission source frequencies and nonlinear factors from the output spectrum of nonlinear circuits. The amplitude of the output spectrum with the input of two sine signals is first calculated based on the power series. Then, the Order Image (OI) is defined to reveal the output spectrum features, and its symmetry characteristic has been comprehensively analyzed. Results show that the maximum symmetry index is observed when the reference frequencies are equal to the excitation frequencies. Based on this observation, the electromagnetic emission source frequencies can be obtained. In addition, a Backward Algorithm (BA) has been introduced to extract nonlinear factors. The proposed approach only requires the output spectrum and the amplitude of one excitation. Compared with other techniques, like the Support Vector Machines and the Recurrent Neural Network, it needs much less prior information. Finally, several examples are carried out to verify the effectiveness of the proposed approach. Results show that the emission source frequencies and nonlinear factors can be accurately extracted. Therefore, the proposed approach shows great potential in electromagnetic interference location and characteristic analysis for nonlinear circuits. INDEX TERMS Electromagnetic emission sources, identification, nonlinear circuits, Order Image, power series.

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Improved linearity performance of AlGaN/GaN MISHFET over conventional HFETs: An optimization study for wireless infrastructure applications

Aggarwal

Agrawal

Gupta

et al. 2011

Superlattices and Microstructures

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A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series Analysis

Cited by 10 publications

References 5 publications

AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective

AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective

A New Electromagnetic Emission Source Frequency and Factor Identification Approach for Nonlinear Circuits From the Output Spectrum Data

Improved linearity performance of AlGaN/GaN MISHFET over conventional HFETs: An optimization study for wireless infrastructure applications

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