Investigation of IMD3 in GaN HEMT based on extended volterra series analysis

Srinidhi, E. R.; Kompa, G.

doi:10.1109/emicc.2007.4412645

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…The system has to transmit the signal sev-eral times to improve communication quality and then the transmission delay increases. Thus, it requires very stringent linearity for PAs in the RF front ends [25] . The nonlinearity of PAs is usually characterized by the intermodulation distortion (IMD), the amplitude modulation to amplitude modulation (AM/AM) distortion and the amplitude modulation to phase modulation (AM/PM) distortion.…”

Section: Nonlinear Sources Of Gan Hemtsmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

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The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability. To ensure the quality of the communication signal, linearity is a key parameter during the system design. However, the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance, transconductance, channel transconductance etc. Among them, the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect, the increasing resistance of access region, the self-heating effect and the trapping effects. Based on the mechanisms, device-level improvement methods of transconductance including the trapping suppression, the nanowire channel, the graded channel, the double channel, the transconductance compensation and the new material structures have been proposed recently. The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

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Section: Nonlinear Sources Of Gan Hemtsmentioning

confidence: 99%

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Du,

Ye,

Cai

et al. 2023

J. Semicond.

View full text Add to dashboard Cite

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“…This cancellation between the dominant resistive and capacitive nonlin- earities can reduce IMD and then increase IIP . To our knowledge, nonlinear cancellation mechanisms generated in transistors have been investigated in the literature, but only for resistive and capacitive nonlinearities [7]- [10], [13], [14]. The influence of the inductive nonlinearity from a RF avalanche delay on nonlinear characteristics has not been reported so far.…”

Section: Introductionmentioning

confidence: 99%

“…Nonlinear sources are modeled as polynomial functions which provide higher degree coefficients for distortion component calculations [12], [14], [20], [21], but the output nonlinear response which is the convolution of high-order kernels with an input signal is calculated by applying Volterra series instead of the memoryless Taylor series Similar to the approach in [22] where admittance expressions are used, nonlinear elements in the breakdown network are expressed with the admittance form to determine their polynomial coefficients. When nonlinear sources are modeled by polynomial functions, polynomial distortion sources are placed in parallel with linear circuit elements [20].…”

Section: Introductionmentioning

confidence: 99%

Investigation of RF Avalanche Inductive Effect on Reduction of Intermodulation Distortion of MOSFETs Using Volterra Series Analysis

Lee

Lin

et al. 2015

IEEE Trans. Microwave Theory Techn.

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In this paper, reduction of intermodulation distortion (IMD) due to inductive behavior for radio frequency (RF) MOSFETs is explored using Volterra series based on a nonlinear model incorporating a physical inductive breakdown network for the first time. The calculated total magnitude of high-order nonlinearities is lower than individual results from a nonlinear transconductance and breakdown inductance. In addition, the analysis result shows that the phase difference between the nonlinear transconductance and the breakdown inductance is almost . Cancellation between resistive nonlinearity and reactive nonlinearity from the inductance due to the avalanche delay is first reported. The input third-order intercept point (IIP ) is improved at biases where the breakdown inductance nonlinearity dominates. Instead, linearity will decrease when the breakdown resistance dominates.

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High Linearity AlGaAs/InGaAs Pseudomorphic HEMT Driver Amplifier Using Tunable Field-Plate Voltage Technology

Cheng

Lin

et al. 2009

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium

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A high-linearity AlGaAs/InGaAs pseudomorphic HEMT RF driver amplifier was developed using a tunable field-plate (FP) bias voltage technology in this study. In order to improve the circuit linearity performance, an FP device was employed at the output stage to provide an additional mechanism to suppress the power of the second and third-order harmonics in a two stage 5.2GHz driver amplifier. A standard Class AB driver amplifier without using FP technology was also implemented for comparison under the identical power consumption. The circuit with an FP device biased at V FP = -4V in the output stage demonstrated at least 2dB improvement on the third-order intercept point at input (IIP 3 ) performance over the standard one within the useful power range in two tone measurement.

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Investigation of IMD3 in GaN HEMT based on extended volterra series analysis

Cited by 4 publications

References 6 publications

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

A review on GaN HEMTs: nonlinear mechanisms and improvement methods

Investigation of RF Avalanche Inductive Effect on Reduction of Intermodulation Distortion of MOSFETs Using Volterra Series Analysis

High Linearity AlGaAs/InGaAs Pseudomorphic HEMT Driver Amplifier Using Tunable Field-Plate Voltage Technology

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