Highly conductive polycrystalline ZnO films have been grown by metal organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn), dimethylzinc-triethylamine (DMZn-TEN) and tertiary butanol (tBuOH) as precursors. When (DMZn-TEN) is used the efficiency of the zinc precursors is reduced by the formation of gas-phase adducts. Films grown by DMZn-TEN are oriented with the c axis in the growth direction. The films are transparent. Specific resistivities as low as 3 × 10 −4 cm and Hall mobilities up to 60 cm 2 (V s) −1 have been achieved in n-doped films where n-butylchloride and triethylgallium have been used as dopant sources.
We have investigated CuInSe2 surfaces as well as the interfaces of the systems ZnSe/CuInSe2 and ZnS/CuInSe2 by vacuum ultraviolet photoelectron spectroscopy with synchrotron radiation. The CuInSe2 substrates are prepared with a hydrogen plasma and show high quality surfaces suitable for further growth of ZnSe in order to determine the valence-band offset of ZnSe/CuInSe2. At the surface of CuInSe2 Se atoms have been replaced by Te or S atoms, so that CuInTe2 or CuInS2 surfaces were formed. We determined the valence-band offsets of CuInTe2/CuInSe2 and CuInS2/CuInSe2 to be ΔEvb(CuInTe2/CuInSe2)=(0.85±0.05)eV and ΔEvb(CuInS2/CuInSe2)=(0.87±0.05)eV. ΔEvb(ZnSe/CuInSe2)=−(0.5±0.1)eV is in good agreement with values from literature. Furthermore we have examined the interface ZnS/CuInS2 and obtained the valence-band offset ΔEvb(ZnS/CuInS2)=−(2.3±0.1)eV.
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