CVD Deposition and Characterisation of Highly Conductive ZnO

Hahn, B.; Wörz, M.; Heindel, G.; Pschorr-Schoberer, E.; Gebhardt, W.

doi:10.4028/www.scientific.net/msf.287-288.339

Cited by 5 publications

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“…Though this combination is known to be very efficient, e.g. for ZnSe:Cl [58] it has been less investigated for ZnO. Furthermore, it has been shown that hydrogen is always a donor in ZnO [59].…”

Section: N-type Dopingmentioning

confidence: 99%

ZnO: From basics towards applications

Klingshirn

2007

Physica Status Solidi (b)

911

508

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Several hundred thousands of tons of ZnO are used by per year, e.g. as an additive to concrete or to rubber. In the field of optoelectronics, ZnO holds promises as a material for a blue/UV optoelectronics, alternatively to GaN, as a cheap, transparent, conducting oxide, as a material for electronic circuits, which are transparent in the visible or for semiconductor spintronics. The main problem is presently, however, a high, reproducible and stable p-doping. We review in this contribution partly critically the material growth, fundamental properties of ZnO and of ZnO-based nanostructures, doping as well as present and future applications, with emphasis on the electronic and optical properties including stimulated emission.

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Section: N-type Dopingmentioning

confidence: 99%

ZnO: From basics towards applications

Klingshirn

2007

Physica Status Solidi (b)

911

508

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“…The other possibility for n‐doping would be to use Group VII elements on the anion site. Though this combination is known to be very efficient, for example, for ZnSe:Cl,57 it has been less thoroughly investigated for ZnO. Furthermore, it has been shown that hydrogen in ZnO is always a donor 58.…”

Section: Electrical Conductivity and Dopingmentioning

confidence: 99%

ZnO: Material, Physics and Applications

2007

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ZnO is presently experiencing a research boom with more than 2000 ZnO-related publications in 2005. This phenomenon is triggered, for example, by hope to use ZnO as a material for blue/UV optoelectronics as an alternative to GaN, as a cheap, transparent, conducting oxide, as a material for electronic circuits that are transparent in the visible or for semiconductor spintronics. Currently, however, the main problem is to achieve high, reproducible and stable p-doping. Herein, we critically review aspects of the material growth, fundamental properties of ZnO and ZnO-based nanostructures and doping as well as present and future applications with emphasis on the electronic and optical properties including stimulated emission.

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“…American scholars first started the research of semi‐conductive shielding materials in the 1950s. In the 1960s, with the commercialisation of EVA and EEA matrix resins, there was a global boom in the research and development of shielding materials [6–8]. Han of Dow Chemical Company used EVA as the matrix to study the effects of carbon nanotubes as the second conductive filler on the electrical, mechanical and rheological properties of the shielding material, and found that the shielding material blended with carbon nanotubes and carbon black as the conductive filler had excellent electrical properties [9].…”

Section: Introductionmentioning

confidence: 99%

Effect of matrix resin components on properties of the semi‐conductive shielding material for high‐voltage cable

Li,

Liu,

Chen

et al. 2023

High Voltage

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The semi‐conductive shielding layer is an important part of the high‐voltage cable, playing a role in uniform electric field and reducing the air gap at the interface. The overall performance of the cable is affected by the semi‐conductive shielding layer with different base resin composition. The matrix resins of ethylene‐vinyl acetate (EVA), ethylene‐ethyl acrylate (EEA) and ethylene‐butyl acrylate (EBA) were used to prepare the semi‐conductive shielding materials of CB/EVA, CB/EEA and CB/EBA. The influences of different matrix resins on the chemical, electrical, thermal and mechanical properties of the shielding materials were investigated. The results show that CB has the best dispersion in EBA resin and the worst dispersion in EEA resin. The temperature inflection points of CB/EVA, CB/EEA and CB/EBA shielding materials are 90°C, 100°C and 110°C, respectively, and the CB/EBA shielding material has the lowest resistivity and the weakest positive temperature coefficient effect at room temperature. The thermal conductivity of all three matrix resins is smaller than that of the shielding material, the thermal conductivity of CB/EVA and CB/EBA shielding materials show a slow increase with temperature, and the CB/EEA shielding material is the least affected by the temperature. The mechanical properties of the three matrix resins and the three shielding materials are EBA > EVA > EEA, among them the stress of CB/EBA shielding material is 31.0 MPa and the strain is 570%. This work has important reference significance for the selection of shielding layer matrix resin and material formulation in engineering applications.

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CVD Deposition and Characterisation of Highly Conductive ZnO

Cited by 5 publications

References 0 publications

ZnO: From basics towards applications

ZnO: From basics towards applications

ZnO: Material, Physics and Applications

Effect of matrix resin components on properties of the semi‐conductive shielding material for high‐voltage cable

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