Cu(In,Ga)Se2 solar cells with a ZnSe buffer layer: interface characterization by quantum efficiency measurements

Engelhardt, Felix; Bornemann, L.; Köntges, Marc; Meyer, Th.; Parisi, J.; Pschorr-Schoberer, E.; Hahn, B.; Gebhardt, W.; Riedl, W.; Rau, Uwe

doi:10.1002/(sici)1099-159x(199911/12)7:6<423::aid-pip281>3.0.co;2-s

Cited by 61 publications

(14 citation statements)

References 11 publications

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“…In addition, light with a wavelength λ ≤ 515 nm is partly absorbed in the 50-70 nm thick CdS buffer layer with a band gap energy E g = 2.4 eV. Only a percentage of the photogenerated electron hole pairs from the CdS contribute to the short circuit current density J SC [1,2] whereas photons absorbed in the ZnO window layer with E g = 3.2 eV are totally lost. These optical losses are a sizeable part of the standard AM1.5G solar spectrum [3].…”

Section: Introductionmentioning

confidence: 78%

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Glaeser

Rau

2007

Thin Solid Films

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Section: Introductionmentioning

confidence: 78%

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Glaeser

Rau

2007

Thin Solid Films

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“…The base parameters for the CIGS cell structure with CdS buffer used for the simulation are shown in Table 1 [1,3,4,11,16,17]. The most important parameters of different buffer layer materials needed for the simulations are depicted in Table 2 [4,[17][18][19][20][21][22][23][24][25][26][27][28][29][30][31].…”

Section: Methodsmentioning

confidence: 99%

Non-Toxic Buffer Layers in Flexible Cu(In,Ga)Se₂Photovoltaic Cell Applications with Optimized Absorber Thickness

Asaduzzaman

Hosen

Ali

et al. 2017

International Journal of Photoenergy

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Absorber layer thickness gradient in Cu(In 1−x Ga x )Se 2 (CIGS) based solar cells and several substitutes for typical cadmium sulfide (CdS) buffer layers, such as ZnS, ZnO, ZnS(O,OH), Zn 1−x Sn x O y (ZTO), ZnSe, and In 2 S 3 , have been analyzed by a device emulation program and tool (ADEPT 2.1) to determine optimum efficiency. As a reference type, the CIGS cell with CdS buffer provides a theoretical efficiency of 23.23% when the optimum absorber layer thickness was determined as 1.6 μm. It is also observed that this highly efficient CIGS cell would have an absorber layer thickness between 1 μm and 2 μm whereas the optimum buffer layer thickness would be within the range of 0.04-0.06 μm. Among all the cells with various buffer layers, the best energy conversion efficiency of 24.62% has been achieved for the ZnO buffer layer based cell. The simulation results with ZnS and ZnO based buffer layer materials instead of using CdS indicate that the cell performance would be better than that of the CdS buffer layer based cell. Although the cells with ZnS(O,OH), ZTO, ZnSe, and In 2 S 3 buffer layers provide slightly lower efficiencies than that of the CdS buffer based cell, the use of these materials would not be deleterious for the environment because of their non-carcinogenic and non-toxic nature.

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“…In recent years, various types of 1D nanostructure, such as III-V, and II-VI group compounds, have been synthesized [8]. However, most devices [12]. Pushpendra et al, investigated pure ZnSe and ZnSe:La NPs with wide bandgap and luminescence which have been synthesized at a low temperature (100 °C) in a single template-free step.…”

Section: Introductionmentioning

confidence: 99%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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Cu(In,Ga)Se2 solar cells with a ZnSe buffer layer: interface characterization by quantum efficiency measurements

Cited by 61 publications

References 11 publications

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Non-Toxic Buffer Layers in Flexible Cu(In,Ga)Se₂Photovoltaic Cell Applications with Optimized Absorber Thickness

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

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Cu(In,Ga)Se2 solar cells with a ZnSe buffer layer: interface characterization by quantum efficiency measurements

Cited by 61 publications

References 11 publications

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Improvement of photon collection in Cu(In,Ga)Se2 solar cells and modules by fluorescent frequency conversion

Non-Toxic Buffer Layers in Flexible Cu(In,Ga)Se2Photovoltaic Cell Applications with Optimized Absorber Thickness

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

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Product

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Non-Toxic Buffer Layers in Flexible Cu(In,Ga)Se₂Photovoltaic Cell Applications with Optimized Absorber Thickness