Metalorganic chemical vapor deposition of ZnSe films on glass and GaAs(111) substrates

Characteristics of Cu(In,Ga)Se2Films Prepared by Atmospheric Pressure Selenization of Cu-In-Ga Precursors Using Ditert-Butylselenide as Se Source

“…6a and 6b], it is evident that the 5-temperature atmospheric pressure selenization process is helpful to improve the crystalline quality of a CIGS film. It is believed that Cu 11 (In,Ga) 9 compound was formed in the as-sputtered Cu-In-Ga metallic precursor prior to the beginning of selenization. At low-temperature selenization stages (200 ∼ 400 • C), intermediate selenide phases like In 4 Se 3 , InSe, CuSe, Cu 2 Se and Ga 2 Se 3 binary compounds are formed sequentially first.…”

“…Organoselenides including dimethylselenide [(CH 3 ) 2 Se:DMSe], 8 diethylselenide [(C 2 H 5 ) 2 Se:DESe], 3 and ditert-butylselenide [(C 4 H 9 ) 2 Se:DTBSe] 9 have recently been proposed as alternative choices for the Se source. These organoselenides are liquid at room temperature and are stored in stainless steel container so that they are much safer than H 2 Se which is commonly stored in a high pressure cylinder.…”

Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate

“…[5][6][7][8] In addition, ZnSe is a promising material for use in windows, lenses, output couplers, beam expanders, optically controlled switches, visible transmission systems, and giant photoresistivity systems. 10,11 Numerous techniques such as atomic layer epitaxy ͑ALE͒, 5-8 metal-organic chemical vapor deposition ͑MOCVD͒, 12,13 molecular beam epitaxy ͑MBE͒, [14][15][16] electrodeposition, 17 chemical bath deposition, 18 and photochemical 19 and thermal evaporation 20 have been used for depositing ZnSe films. 10,11 Numerous techniques such as atomic layer epitaxy ͑ALE͒, 5-8 metal-organic chemical vapor deposition ͑MOCVD͒, 12,13 molecular beam epitaxy ͑MBE͒, [14][15][16] electrodeposition, 17 chemical bath deposition, 18 and photochemical 19 and thermal evaporation 20 have been used for depositing ZnSe films.…”

Vacuum and Liquid-Phase Processing of ZnSe Buffer-Layer for Chalcopyrite Absorber Based Photovoltaic Technology

“…The present paper reports on the results of ZnSe layers deposited on CuGaSe 2 and Cu(In,Ga)Se 2 absorbers by standard vacuum electron-beam evaporation techniques (EBD), at temperatures of 300-400 • C, and non-vacuum chemical solution processing techniques (CBD), at moderate temperature of 70 • C, followed by postgrowth annealing, in inert gas (Ar or N 2 ), at temperatures of 300-400 • C. The deposition process parameters were selected with respect to the results of ZnSe deposition by EBD and CBD on amorphous glass substrates at temperatures ranging from RT to 450 • C. There have been several reports on the properties of polycrystalline ZnSe films deposited on glass substrates by various techniques (MOCVD, 61 close-spaced vacuum sublimation, 62,63 thermal evaporation, [64][65][66][67][68][69][70] electron beam evaporation, 71,72 chemical bath deposition, [73][74][75][76] electrochemical deposition, 77,78 screen-printing, 40,79 spray pyrolysis 80,81 ). However, only a few reports comprise information on the dependence of the film quality on the deposition parameters such as substrate temperature, 62,63,[65][66][67]80 or deposition time and growing film thickness.…”

“…However, only a few reports comprise information on the dependence of the film quality on the deposition parameters such as substrate temperature, 62,63,[65][66][67]80 or deposition time and growing film thickness. 61,69 Besides, the substrate temperature has mostly been varied in a relatively narrow temperature range: 200-400 • C, 62 150-350 • C, 65 210-316 • C, 66 400-450 • C; 80 so has been also varied the post-growth annealing temperature: 100-300 • C, 67 620-700 • C. 72 The effect of the ZnSe buffer layer thickness on the CIGS cell performance has only recently systematically been investigated for ECS Journal of Solid State Science and Technology, 7 (10) P541-P561 (2018) P543 thicknesses in the range 10-100 nm and shown that ZnSe buffer with optimum thickness 30-40 nm can promote cell efficiency to greater than 20%. 82 Additionally, most reports, in the past and at present, deal separately with EBD 71,72 or CBD 76 process studies.…”