Experiments and thermodynamic calculations were performed to gain a better understanding of the CVD of Ti 3 SiC 2 . The computer program SOLGASMIX-PV was used to calculate deposition diagrams for the TiCl 4 ±SiCl 4 ±CCl 4 ±H 2 reagent system. The effects of hydrogen to reagent concentration ratio, temperature, and pressure were explored using a ªboxº type study surrounding a central set of conditions (temperature 1300 K, pressure 760 kPa, and a hydrogen to reagent concentration ratio of 20:1). The calculated results were not in good agreement with the experimental results, which suggests that either kinetics plays an important role in the CVD of Ti 3 SiC 2 , or the thermodynamic data are not sufficiently known. The experimental study of the CVD of Ti 3 SiC 2 revealed important morphological details of the Ti 3 SiC 2 deposits. Complicated microstructures, consisting of various combinations of Ti 3 SiC 2 , TiC, and TiSi 2 , were obtained. The preferred orientation of Ti 3 SiC 2 basal planes was shown to be perpendicular to the substrate, with the degree of orientation and other microstructural characteristics dependent on temperature.
Large grain polycrystalline Si films were grown by chemical vapor deposition (CVD) onto TiB 2 substrates using the SiCl 4 -H 2 reagent system. A statistically designed processing study was used to correlate the film growth rate, crystallographic orientation, and grain size with deposition temperature, the SiCl 4 : H 2 ratio, and the level of B doping. Each process variable influenced grain size with temperature having the dominant effect. Grains as large as 15 to 20 mm were achieved for a coating thickness of about 50 mm.672
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