Large grain polycrystalline silicon via chemical vapor deposition

Abstract

Large grain polycrystalline Si films were grown by chemical vapor deposition (CVD) onto TiB 2 substrates using the SiCl 4 -H 2 reagent system. A statistically designed processing study was used to correlate the film growth rate, crystallographic orientation, and grain size with deposition temperature, the SiCl 4 : H 2 ratio, and the level of B doping. Each process variable influenced grain size with temperature having the dominant effect. Grains as large as 15 to 20 mm were achieved for a coating thickness of about 50 mm.672