CVD of Ti3SiC2

Pickering, E.; Lackey, W. J.; Crain, Steven P.

doi:10.1002/1521-3862(200011)6:6<289::aid-cvde289>3.0.co;2-4

Cited by 44 publications

(27 citation statements)

References 8 publications

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“…It is expected that adhesive Ti 3 SiC 2 coatings are feasibly obtained on metallic substrate due to its metallic properties. Technologies are already available to coat Ti 3 SiC 2 on metallic substrate [43][44][45]. Ti 3 SiC 2 as an interlayer for diamond growth on some important metallic substrates such as high-speed steel and hard alloys will be investigated to expand diamond applications as protective coatings.…”

Section: Article In Presscontrasting

confidence: 52%

Nucleation and growth of diamond on titanium silicon carbide by microwave plasma-enhanced chemical vapor deposition

Yang

Sun

2006

Journal of Crystal Growth

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Section: Article In Presscontrasting

confidence: 52%

Nucleation and growth of diamond on titanium silicon carbide by microwave plasma-enhanced chemical vapor deposition

Yang

Sun

2006

Journal of Crystal Growth

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“…They deposited Ti 3 SiC 2 from a gas mixture of TiCl 4 , SiCl 4 , CCl 4 and H 2 . Later, CVD growth of Ti 3 SiC 2 was also reported by Goto and Hirai [184], Pickering et al [185], and Racault et al [186]; the latter group 34 used CH 4 rather than CCl 4 as a carbon source. It is interesting to note that these authors discussed very early the exceptional thermal and mechanical properties of Ti 3 SiC 2 and its potential as a soft ceramic coating.…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

“…An interesting observation in CVD of Ti 3 SiC 2 is that Ti 3 SiC 2 may be formed not only by the simultaneous deposition of all elements, but by a reaction between the gas and a solid phase such as TiC [183,185]. This concept, termed reactive CVD (RCVD), has been used by Jacques et al [188] and Faikh et al [189,190].…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

The M+1AX phases: Materials science and thin-film processing

et al. 2010

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This article is a critical review of the M n+1 AX n phases ("MAX phases", where n =1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides ("X") of a transition metal ("M") and an A-group element. The most well known are Ti 2 AlC, Ti 3 SiC 2 , and Ti 4 AlN 3 . There are ~60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M n+1 X n slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods.Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental materials properties. However, the surface-initiated decomposition of M n+1 AX n thin films into MX compounds at temperatures of 1000-1100 °C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically require synthesis temperatures of ~800 °C, recent results have demonstrated that V 2 GeC and Cr 2 AlC can be deposited at ~450 °C. Also, thermal spray of Ti 2 AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principles calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials 3 analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti 4 SiC 3 , Ta 4 AlC 3 , and Ti 3 SnC 2 . Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as superconductivity, magnetism, and optics. 4

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“…Furthermore, the temperature used for Ti 3 SiC 2 film deposition using other methods than ADM is, at the minimum, equal to 650 • C, 66 but mostly above 800 • C. 23,26 Consequently, ADM is suitable to deposit onto many kinds of substrates including those with a low melting point like plastics. 58,67,68 Secondly, it is possible to start the deposition from a powder with the final desired composition, so that no gaseous mixture of precursors 19,20 is necessary and again no specific stoichiometry or substrates. 21 Finally, the energy deployed for ADM is only determined by the creation of a differential pressure, and does not need additional energy to activate or enhance a chemical reaction or to vaporize or ablate a target.…”

Section: Introductionmentioning

confidence: 73%