We have set up a model for the energy-dependent lifetime, including the effects of the charge carrier collisions with ionized impurities, polar optical phonons, and space charge. The model is then used to compute the mobility spectrum at each temperature, which used to compute the pertinent magnetic-field-dependent Hall parameters. The computed Hall parameters compared can then be measured values to estimate the validity of the lifetime model and parameters. The method has been applied to two n-GaAs∕SI–GaAs epitaxial layers containing two types of carriers. The magnetic field dependence of the Hall voltage has been observed in the studied GaAs layers. We present the numerical solution of the neutrality equation, which contains all sources of charges present in the sample, and numerical integration of the total relaxation times ⟨τ⟩ so combined that is possible to obtain the mobility of the partial charges and their part in the whole conductivity of the layer.
PACS 73.61.Ga, We report on the fabrication of ZnO:N by thermal oxidation of sputter-deposited zinc nitride. Through optimising several technological steps we achieved p-type conductivity with carrier concentration in mid 10 17 cm -3 range and mobility of ~10 cm 2 /Vs. PL spectra of p-type ZnO:N films show a sharp peak at 3.36 eV, most likely due to neutral acceptor bound excitons. The transmittance of p-ZnO:N in the whole visible spectrum is ~ 80 % making it suitable for transparent electronics.
Performance of external cavity diode lasers with silicon gratings produced by E-beam writing and subsequent reactive ion etching is described. Optical amplifiers used in the experiments were based on single quantum well heterostructures grown by molecular beam epitaxy. The lasers were set up in the Littrow configuration and have been designed to allow for wavelength tuning in the range centred at 960 nm.
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