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External cavity tunable lasers have been around for many years and now constitute a large group of semiconductor lasers featuring very unique properties. The present review has been restricted to the systems based on the edge emitting diode lasers set-up in a hybrid configuration. The aim was to make the paper as concise as possible without sacrificing, however, most important details. We start with short description of the fundamentals essential for operation of the external cavity lasers to set the stage for explanation of their properties and some typical designs. Then, semiconductor optical amplifiers used in the external cavity lasers are highlighted more in detail as well as diffraction gratings and other types of wavelength-selective reflectors used to provide optical feedback in these lasers. This is followed by a survey of designs and properties of various external cavity lasers both with mobile bulk gratings and with fixed wavelength selective mirrors. The paper closes with description of some recent developments in the field to show prospects for further progress directed towards miniaturization and integration of the external cavity laser components used so far to set-up hybrid systems.

Performance of external cavity diode lasers with silicon gratings produced by E-beam writing and subsequent reactive ion etching is described. Optical amplifiers used in the experiments were based on single quantum well heterostructures grown by molecular beam epitaxy. The lasers were set up in the Littrow configuration and have been designed to allow for wavelength tuning in the range centred at 960 nm.

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Pr oceed in gs of t he Co n f er ence \ F rom Qu an t um Op t i cs t o Ph o t on i csIn t he present pap er w e re view our recent w or ks on techno logy, basic physics, and appli cati ons of one-dimensi onal photonic structures . W e demonstrate spontaneous emission control in Inx Ga 1 À x A s/GaA s planar micro cavities w ith distribu ted Bragg re Ûectors. I n general, observed trends are in agreement w ith theoretical predictio ns. W e also demonstrate the op eration of resonant-cavity light emitting dio des and opticall y pump ed vertical cavity light emitting dio des develop ed recently at the Department of Physics and T echnology of Low -Dimensional Structures of the I nstitute of Electron T echnology .

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This paper provides a theoretical analysis of guided lateral modes in broad-area (BA) semiconductor lasers with modal reflectors formed by patterning the reflectivity of the front facet. The analysis has been performed by using the model based on the effective-index method and the concept of the effective facet reflectivity. The numerical results include mode threshold conditions and far-field patterns of the lasing modes for various reflector configurations.