External cavity diode lasers with ridge-waveguide type broad contact semiconductor optical amplifiers

Mroziewicz, B.; Piwoński, Tomasz; Kowalczyk, E.; Szerling, Anna; Lewandowski, S.

doi:10.1117/12.621811

Cited by 3 publications

(5 citation statements)

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“…It is therefore expected that in ECL configuration, single mode external cavity lasing would continue for drive currents up to a point somewhat higher than the crossover shown in Figure 7, but eventually the FP modes will start dominating at higher drive currents. This explains the results by Mroziewicz et al 6 who observed single mode ECL lasing at a current below the threshold level of the standalone laser. The presence of weak FP modes of oscillation in ECL mode of operation at a higher drive current is also consistent with our results.…”

Section: External Cavity Lasingsupporting

confidence: 63%

“…However, the effect of threshold current increase is well compensated for by an enhanced light emission ratio (L Front /L out ) and an increase in slope efficiency, η slope , as is evident from Equations (4)- (6). The overall result of these effects would be a significant increase of the useful laser power with simultaneous reduction of the total power dissipation at normal operating conditions, as will be discussed in the following section.…”

Section: Fabry Pérot Lasingmentioning

confidence: 83%

“…In general, the lasing threshold in ECL configuration is reported to be smaller than that of a laser working in a standalone condition. [4][5][6] There have been reports of changes in slope efficiency, as well as the simultaneous existence of ECL and FP modes of lasing.…”

Section: Introductionmentioning

confidence: 97%

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Anti reflection coatings in semiconductor lasers: effects on power emission and external cavity lasing

2012

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Parameters controlling light generation and emission in semiconductor lasers were analyzed. Effects of facet reflectivity on laser emission and the overall power dissipation were studied. It is shown with typical values that, optimized conditions of facet coating can reduce the laser power dissipation by several hundred milliwatts for optical output levels on the order of 10 mw. A mathematical model was developed for external cavity lasing of semiconductor lasers. Effects of threshold shift and changes in slope efficiency for external cavity operation, as reported in the literature, are explained by our model. Our model also explains reported observations of residual Fabry-Pérot modes of oscillation in external cavity operation. It is shown that anti reflection coating plays the most significant role in decreasing the threshold current in external cavity mode compared to that of Fabry Pérot lasing. It is estimated that a coating reflectivity of 10 -5 with an external grating efficiency of 50% can result in a shift of threshold current by more than 50 mA. The effects of grating efficiency and facet reflectivity on increasing the window of feasible external cavity laser operation with reduced competition from residual modes were studied.

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Section: External Cavity Lasingsupporting

confidence: 63%

Section: Fabry Pérot Lasingmentioning

confidence: 83%

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Anti reflection coatings in semiconductor lasers: effects on power emission and external cavity lasing

2012

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“…However, spectra reported in the literature contain, in some cases, background FP emission in addition to the single mode ECL emission. 5,8 There have also been reports of instabilities and mode hopping of external cavity systems at increased drive currents. 4 In a recent article, we presented a theoretical investigation on the effect of ECL system parameters on the quality of external cavity lasing.…”

Section: Introductionmentioning

confidence: 97%

Mid-infrared external cavity lasing through suppression of Fabry-Perot oscillation

Huda

Tulip

Jäger

2013

Quantum Sensing and Nanophotonic Devices X

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An external cavity lasing system, which operates at 2.4 μm and involves an InGaAsSb Fabry-Pérot gain chip, was developed and characterized. The system was set up in a Littrow configuration to achieve a tuning range of about 100 nm. Continuous, mode-hope free tuning was observed with variation of grating angle. The threshold current of the lasing chip varied from 86 mA down to 70 mA for lasing in Fabry-Pérot (FP) and external cavity (ECL) modes, respectively. A dependence of the threshold current on lasing wavelength was observed. The tuning range was found to depend on the semiconductor gain profile and also on the intensity of the optical feedback through the collimation-dispersion system. Drifting of the wavelength, as observed in intra cavity semiconductor lasers, was not observed for drive currents of up to 350 mA in regions close to the gain peak. Single mode ECL lasing could be sustained in this range at a significantly weaker optical feedback. Traces of FP lasing were, however, observed at currents in the range of 100-200 mA for wavelengths in the shoulder regions of the gain profile. In these cases, an increase of drive current resulted in mode hopping to multi-mode FP lasing. Our results confirm the competing nature of FP lasing with that of ECL mode of lasing. The onset of multi-mode FP lasing, and eventual hopping to these modes, can be correlated with the gain profile, drive current, and optical feedback.

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“…The additional advantage such gratings present is that this could be useful for the ECLs developed in MOEM (micro-opto-electro-mechanical) technology [46]. Silicon gratings can be made in many ways, i.e., using holography [47], by lithography [44], or direct electron beam (E-beam) writing and etching [48]. Each method brings good results and economical reasons may decide which one of them will be chosen.…”

Section: Diffraction Gratingsmentioning

confidence: 99%

External cavity wavelength tunable semiconductor lasers - a review

Mroziewicz

2008

Opto-Electronics Review

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External cavity tunable lasers have been around for many years and now constitute a large group of semiconductor lasers featuring very unique properties. The present review has been restricted to the systems based on the edge emitting diode lasers set-up in a hybrid configuration. The aim was to make the paper as concise as possible without sacrificing, however, most important details. We start with short description of the fundamentals essential for operation of the external cavity lasers to set the stage for explanation of their properties and some typical designs. Then, semiconductor optical amplifiers used in the external cavity lasers are highlighted more in detail as well as diffraction gratings and other types of wavelength-selective reflectors used to provide optical feedback in these lasers. This is followed by a survey of designs and properties of various external cavity lasers both with mobile bulk gratings and with fixed wavelength selective mirrors. The paper closes with description of some recent developments in the field to show prospects for further progress directed towards miniaturization and integration of the external cavity laser components used so far to set-up hybrid systems.

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External cavity diode lasers with ridge-waveguide type broad contact semiconductor optical amplifiers

Cited by 3 publications

References 0 publications

Anti reflection coatings in semiconductor lasers: effects on power emission and external cavity lasing

Anti reflection coatings in semiconductor lasers: effects on power emission and external cavity lasing

Mid-infrared external cavity lasing through suppression of Fabry-Perot oscillation

External cavity wavelength tunable semiconductor lasers - a review

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